Characterization of Thin-Film Lithium Batteries with Stable Thin-Film Li[sub 3]PO[sub 4] Solid Electrolytes Fabricated by ArF Excimer Laser Deposition

2010 ◽  
Vol 157 (4) ◽  
pp. A521 ◽  
Author(s):  
Naoaki Kuwata ◽  
Naoya Iwagami ◽  
Yoshinari Tanji ◽  
Yasutaka Matsuda ◽  
Junichi Kawamura
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Lithium Batteries ◽  
Solid Electrolytes ◽  
Laser Deposition ◽  
Arf Excimer Laser

Preparation of boron carbide thin film by pulsed KrF excimer laser deposition process

2002 ◽  
Vol 407 (1-2) ◽  
pp. 126-131 ◽  
Author(s):  
Shin-ichi Aoqui ◽  
Hisatomo Miyata ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Kenji Ebihara
Keyword(s):  
Thin Film ◽  
Boron Carbide ◽  
Excimer Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Krf Excimer Laser

Characterization of GaAs surfaces treated with phosphine gas photodecomposed by an ArF excimer laser

1998 ◽  
Vol 72 (12) ◽  
pp. 1472-1474 ◽  
Author(s):  
Takashi Sugino ◽  
Hideaki Ninomiya ◽  
Junji Shirafuji ◽  
Koichiro Matsuda
Keyword(s):  
Excimer Laser ◽  
Arf Excimer Laser

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Characterization of $\bf LiNbO_{3}$ Optical-Waveguide Film Grown on Sapphire by ArF Excimer Laser Ablation

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 6084-6091 ◽  
Author(s):  
Masamitsu Haruna ◽  
\ast ◽  
Hideki Ishizuki ◽  
Jun Tsutsumi ◽  
Yusaku Shimaoka ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Optical Waveguide ◽  
Excimer Laser ◽  
Excimer Laser Ablation ◽  
Arf Excimer Laser

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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