Effect of Phosphorus and Carbon Incorporation in Amorphous Cobalt Films Prepared by Chemical Vapor Deposition

2010 ◽  
Vol 157 (1) ◽  
pp. D29 ◽  
Author(s):  
Lucas B. Henderson ◽  
John G. Ekerdt
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Incorporation ◽  
Cobalt Films

Temperature Dependence of Carbon Incorporation in AlxGa1-xAs Grown by Metalorganic Chemical Vapor Deposition (MOCVD)

1994 ◽  
Vol 340 ◽  
Author(s):  
D.V. Forbes ◽  
J.J. Coleman
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Concentration ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
Carbon Incorporation ◽  
Temperature Regimes ◽  
Two Temperature ◽  
Metalorganic Chemical

ABSTRACTThe dependence of carbon concentration on growth temperature and V/HII ratio for high composition AlxGal-xAs (x>0.40) grown by metalorganic chemical vapor deposition using trimethyl sources has been investigated. The carbon concentration exhibits at least two temperature regimes having different trends with temperature. In the region of 600-675°C, the carbon concentration decreases with temperature, while in the range of 700-800°C, the carbon concentration increases with temperature. This dependence was observed in samples grown in two separate reactors. High values of V/III ratio have been found to suppress the low temperature carbon incorporation in AlAs. The results are qualitatively explained in terms of the chemical reactions and surface kinetics that may occur during the growth of GaAs or AlxGal-xAs.

Organometallic chemical vapor deposition of tungsten metal, and suppression of carbon incorporation by codeposition of platinum

1992 ◽  
Vol 61 (15) ◽  
pp. 1793-1795 ◽  
Author(s):  
Burkhard Niemer ◽  
Alfred A. Zinn ◽  
William K. Stovall ◽  
Paul E. Gee ◽  
Robert F. Hicks ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Incorporation ◽  
Tungsten Metal ◽  
Organometallic Chemical Vapor Deposition

scholarly journals Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition

1989 ◽  
Vol 55 (5) ◽  
pp. 463-465 ◽  
Author(s):  
Konstantinos P. Giapis ◽  
Klavs F. Jensen ◽  
J. E. Potts ◽  
Steven J. Pachuta
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Incorporation ◽  
Metalorganic Chemical

Reactions of Cu(hfac)2and Co2(CO)8during Chemical Vapor Deposition of Copper−Cobalt Films

1998 ◽  
Vol 10 (8) ◽  
pp. 2145-2151 ◽  
Author(s):  
Shuo Gu ◽  
Xuebin Yao ◽  
Mark J. Hampden-Smith ◽  
Toivo T. Kodas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Films

Infrared study of carbon incorporation during chemical vapor deposition of SiC using methylsilanes

2001 ◽  
Vol 175-176 ◽  
pp. 591-596 ◽  
Author(s):  
Masanori Shinohara ◽  
Yasuo Kimura ◽  
Daisei Shoji ◽  
Michio Niwano
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Incorporation ◽  
Infrared Study
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