scholarly journals Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition

1989 ◽  
Vol 55 (5) ◽  
pp. 463-465 ◽  
Author(s):  
Konstantinos P. Giapis ◽  
Klavs F. Jensen ◽  
J. E. Potts ◽  
Steven J. Pachuta
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Carbon Incorporation ◽  
Metalorganic Chemical

Temperature Dependence of Carbon Incorporation in AlxGa1-xAs Grown by Metalorganic Chemical Vapor Deposition (MOCVD)

1994 ◽  
Vol 340 ◽  
Author(s):  
D.V. Forbes ◽  
J.J. Coleman
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Concentration ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
Carbon Incorporation ◽  
Temperature Regimes ◽  
Two Temperature ◽  
Metalorganic Chemical

ABSTRACTThe dependence of carbon concentration on growth temperature and V/HII ratio for high composition AlxGal-xAs (x>0.40) grown by metalorganic chemical vapor deposition using trimethyl sources has been investigated. The carbon concentration exhibits at least two temperature regimes having different trends with temperature. In the region of 600-675°C, the carbon concentration decreases with temperature, while in the range of 700-800°C, the carbon concentration increases with temperature. This dependence was observed in samples grown in two separate reactors. High values of V/III ratio have been found to suppress the low temperature carbon incorporation in AlAs. The results are qualitatively explained in terms of the chemical reactions and surface kinetics that may occur during the growth of GaAs or AlxGal-xAs.

Investigation of Carbon Incorporation into GaAs by TEGa-AsH3 Based Low Pressure Metalorganic Chemical Vapor Deposition

1993 ◽  
Vol 300 ◽  
Author(s):  
M. S. Feng ◽  
H. D. Chen ◽  
C. H. Wu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Dopant Concentration ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Carbon Incorporation ◽  
Carbon Doped ◽  
Gaas Films ◽  
Metalorganic Chemical

ABSTRACTHeavily Carbon doped GaAs(l×1018−1×1020cm−3 ) grown by low pressure metalorganic chemical vapor deposition(LPMOCVD) using triethylgallium(TEGa), arsine(AsH3) as sources and liquid carbon-tetrachoride(CCI4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios and CCI4 flow rates. Dopant concentration first increased from 550°C and reached a maxium at 570°C and then decreased monotonously. Carbon incorporation was strongly enhanced when V/III ratio was less than 30 at Tg=590°C or less than 40 at Tg=630°C. Hole concentration increased and then decreased as CCI4 increased. The doping efficiency of epitaxtial layers grown on(100) substrate was higher than that on 2° off toward <110> misoriented substrate. Carbon doped GaAs films had higher Hall mobility than zinc doped GaAs films at high doping level due to less self-compensation. The highest dopant concentration in this system was 2.3×1020cm−3 at Tg=580°C and V/III=10.

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