Electrical and Reliability Characteristics of Barrierless Cu-Based Contact for High Dielectric Constant Oxide Thin-Film Device Integration

2009 ◽  
Vol 156 (12) ◽  
pp. G226 ◽  
Author(s):  
C. H. Wu ◽  
J. P. Chu ◽  
C. H. Lin ◽  
S. F. Wang
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Oxide Thin Film ◽  
Thin Film Device ◽  
Reliability Characteristics ◽  
Device Integration ◽  
High Dielectric

Layered Cu-based electrode for high-dielectric constant oxide thin film-based devices

2003 ◽  
Vol 82 (9) ◽  
pp. 1452-1454 ◽  
Author(s):  
W. Fan ◽  
S. Saha ◽  
J. A. Carlisle ◽  
O. Auciello ◽  
R. P. H. Chang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Oxide Thin Film ◽  
High Dielectric

Nonferroelectric epitaxial Sr–Bi–Ta oxide thin film with a high dielectric constant

1998 ◽  
Vol 73 (17) ◽  
pp. 2518-2520 ◽  
Author(s):  
S. J. Hyun ◽  
B. H. Park ◽  
S. D. Bu ◽  
J. H. Jung ◽  
T. W. Noh
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
High Dielectric Constant ◽  
Oxide Thin Film ◽  
High Dielectric

A novel functional polyurethane as a dielectric layer for organic thin-film transistors

2018 ◽  
Vol 42 (13) ◽  
pp. 10969-10975
Author(s):  
Xuesong Wang ◽  
He Wang ◽  
Yao Li ◽  
Ting Xu ◽  
Wei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
High Dielectric

A polyurethane material with a high dielectric constant was used to regulate the grain size of p-6P.

Organic Thin-Film Transistors on a Plastic Substrate with Anodically Oxidized High-Dielectric-Constant Insulators

2003 ◽  
Vol 42 (Part 1, No. 1) ◽  
pp. 299-304 ◽  
Author(s):  
Yoshiki Iino ◽  
Youji Inoue ◽  
Yoshihide Fujisaki ◽  
Hideo Fujikake ◽  
Hiroto Sato ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
High Dielectric Constant ◽  
Organic Thin Film Transistors ◽  
Plastic Substrate ◽  
Organic Thin Film ◽  
High Dielectric

Laser Assisted Molecular Beam Deposition of Thin Films for Gate Dielectrics Applications

2003 ◽  
Vol 768 ◽  
Author(s):  
Robert L. DeLeon ◽  
James F. Garvey ◽  
Gary S. Tompa ◽  
Richard Moore ◽  
Harry Efstathiadis
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Molecular Beam ◽  
High Dielectric Constant ◽  
Film Surface ◽  
Rutherford Back Scattering ◽  
Molecular Beam Deposition ◽  
High Dielectric ◽  
Beam Deposition

AbstractHigh dielectric constant (k), the thermal stability and the chemical stability with respect to reaction with silicon of hafnium oxide (HfO2), and zirconium oxide (ZrO2) places them among the leading candidates for an alternative gate dielectric material. High dielectric constant HfO2 and ZrO2 thin films have successfully been deposited on silicon substrates at a temperature of 27 °C by Laser Assisted Molecular Beam Deposition (LAMBD). The LAMBD process is related to conventional Pulsed Laser Deposition (PLD). In the PLD process, the ablation plume impinges directly upon the substrate to deposit the thin film, whereas in the LAMBD process, the ablation material is expanded within a concurrently pulsed stream of a reactive gas. The gas pulse serves both to create the desired material and to transport the material to the substrate for deposition of the thin film. One advantage of the LAMBD process is that a chemically reactive carrier gas can be selected to produce the desired chemical products. Depositions yielded 35 nm to 135 nm thick HfO2, and ZrO2 films.Structural and chemical characterization of the films were performed by Auger electron spectroscopy (AES), Rutherford back-scattering (RBS), scanning electron microscopy (SEM), and x-ray diffraction (XRD). Film surface was investigated by atomic force microscopy (AFM) while optical characterization was also performed by means of spectroscopic ellipsometry (SE). Within the process window investigated, the film Hf/O and Zr/O ratios was found to be in the range 0.6 to 1.2. The as deposited films were amorphous with refraction index (RI) at 623 nm wavelength films in the range of 1.22 to 1.27 for the HfO2 and in the range of 1.23 to 1.19 for the ZrO2 films.

High dielectric constant in CaCu3Ti4O12 thin film prepared by pulsed laser deposition

2003 ◽  
Vol 445 (1) ◽  
pp. 7-13 ◽  
Author(s):  
Y.L. Zhao ◽  
G.W. Pan ◽  
Q.B. Ren ◽  
Y.G. Cao ◽  
L.X. Feng ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
High Dielectric Constant ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Dielectric
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