Preparation of Native Oxide and Carbon-Minimized Ge Surface by NH[sub 4]OH-Based Cleaning for High-k∕Ge MOS Gate Stacks

2009 ◽  
Vol 156 (11) ◽  
pp. H813 ◽  
Author(s):  
H. Seo ◽  
K. B. Chung ◽  
J. P. Long ◽  
G. Lucovsky
Keyword(s):  
Native Oxide ◽  
Gate Stacks ◽  
High K ◽  
Mos Gate

A New Quality Metric for III–V/High-k MOS Gate Stacks Based on the Frequency Dispersion of Accumulation Capacitance and the CET

2017 ◽  
Vol 38 (3) ◽  
pp. 318-321 ◽  
Author(s):  
Abhitosh Vais ◽  
Jacopo Franco ◽  
Koen Martens ◽  
Dennis Lin ◽  
Sonja Sioncke ◽  
...  
Keyword(s):  
Frequency Dispersion ◽  
Gate Stacks ◽  
Quality Metric ◽  
High K ◽  
Mos Gate

scholarly journals Hf-based high-k dielectrics for p-Ge MOS gate stacks

2014 ◽  
Vol 32 (3) ◽  
pp. 03D105 ◽  
Author(s):  
Sivan Fadida ◽  
Felix Palumbo ◽  
Laura Nyns ◽  
Dennis Lin ◽  
Sven Van Elshocht ◽  
...  
Keyword(s):  
Gate Stacks ◽  
High K ◽  
Mos Gate

The Role of the Interfaces in the 1/f Noise of MOSFETs with High-k Gate Stacks

2019 ◽  
Vol 19 (2) ◽  
pp. 87-99 ◽  
Author(s):  
Felice Crupi ◽  
Paolo Magnone ◽  
Eddy Simoen ◽  
Luigi Pantisano ◽  
Gino Giusi ◽  
...  
Keyword(s):  
Gate Stacks ◽  
High K

Counter Dipole Layer Formation in Multilayer High-$k$ Gate Stacks

2012 ◽  
Vol 51 ◽  
pp. 081303 ◽  
Author(s):  
Shinya Hibino ◽  
Tomonori Nishimura ◽  
Kosuke Nagashio ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Layer Formation ◽  
Gate Stacks ◽  
Dipole Layer ◽  
High K
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