MOCVD Of Gallium Oxide Thin Films Using Homoleptic Gallium Complexes: Precursor Evaluation and Thin Film Characterisation

2019 ◽  
Vol 25 (8) ◽  
pp. 617-624 ◽  
Author(s):  
Malte Hellwig ◽  
Ke Xu ◽  
Davide Barreca ◽  
Alberto Gasparotto ◽  
Benedikt Niermann ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Gallium Oxide ◽  
Oxide Thin Films ◽  
Gallium Complexes

Fabrication of a resistive switching gallium oxide thin film with a tailored gallium valence state and oxygen deficiency by rf cosputtering process

RSC Advances ◽  
2016 ◽  
Vol 6 (11) ◽  
pp. 8964-8970 ◽  
Author(s):  
Chiharu Kura ◽  
Yoshitaka Aoki ◽  
Etsushi Tsuji ◽  
Hiroki Habazaki ◽  
Manfred Martin
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Valence State ◽  
Gallium Oxide ◽  
Oxygen Deficiency ◽  
Oxide Thin Film ◽  
Oxide Thin Films

Resistive switching gallium oxide thin films with tailored oxygen deficiency and gallium valence state were fabricated by rf cosputtering of Ga2O3 and Cr.

scholarly journals Synthesis, Crystallography, Microstructure, Crystal Defects, Optical and Optoelectronic Properties of ZnO:CeO2 Mixed Oxide Thin Films

Photonics ◽  
2020 ◽  
Vol 7 (4) ◽  
pp. 112
Author(s):  
Qais M. Al-Bataineh ◽  
Mahmoud Telfah ◽  
Ahmad A. Ahmad ◽  
Ahmad M. Alsaad ◽  
Issam A. Qattan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Refractive Index ◽  
Mixed Oxide ◽  
Visible Region ◽  
Functional Materials ◽  
Crystal Defects ◽  
Optoelectronic Properties ◽  
Oxide Thin Films ◽  
Pure Ceo2

We report the synthesis and characterization of pure ZnO, pure CeO2, and ZnO:CeO2 mixed oxide thin films dip-coated on glass substrates using a sol-gel technique. The structural properties of as-prepared thin film are investigated using the XRD technique. In particular, pure ZnO thin film is found to exhibit a hexagonal structure, while pure CeO2 thin film is found to exhibit a fluorite cubic structure. The diffraction patterns also show the formation of mixed oxide materials containing well-dispersed phases of semi-crystalline nature from both constituent oxides. Furthermore, optical properties of thin films are investigated by performing UV–Vis spectrophotometer measurements. In the visible region, transmittance of all investigated thin films attains values as high as 85%. Moreover, refractive index of pure ZnO film was found to exhibit values ranging between 1.57 and 1.85 while for CeO2 thin film, it exhibits values ranging between 1.73 and 2.25 as the wavelength of incident light decreases from 700 nm to 400 nm. Remarkably, refractive index of ZnO:CeO2 mixed oxide-thin films are tuned by controlling the concentration of CeO2 properly. Mixed oxide-thin films of controllable refractive indices constitute an important class of smart functional materials. We have also investigated the optoelectronic and dispersion properties of ZnO:CeO2 mixed oxide-thin films by employing well-established classical models. The melodramatic boost of optical and optoelectronic properties of ZnO:CeO2 mixed oxide thin films establish a strong ground to modify these properties in a skillful manner enabling their use as key potential candidates for the fabrication of scaled optoelectronic devices and thin film transistors.

scholarly journals Photoluminescence Activity of Neodymium-Doped Gallium Oxide Thin Films

2008 ◽  
Vol 1111 ◽  
Author(s):  
Celine Lecerf ◽  
Philippe Marie ◽  
Cedric Frilay ◽  
Julien Cardin ◽  
Xavier Portier
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Gallium Oxide ◽  
Electronic Transitions ◽  
Oxide Thin Films ◽  
Structural And Optical Properties ◽  
Luminescence Efficiency

AbstractPhotoluminescence activity was observed for neodymium-doped gallium oxide thin films prepared by radiofrequency magnetron co-sputtering. Structural and optical properties of as-grown and annealed films were studied and photoluminescence activity was especially investigated. The most intense lines were associated to the 4F3/2  4I9/2 and 4F3/2  4I11/2 electronic transitions of Nd3+. The effects of deposition and treatment parameters such as the substrate temperature, the post anneal treatment or the neodymium content in the films were particularly examined with the aim to reach the best luminescence efficiency.

Growth of gallium oxide thin films from gallium acetylacetonate by atomic layer epitaxy

1996 ◽  
Vol 6 (1) ◽  
pp. 27-31 ◽  
Author(s):  
Minna Nieminen ◽  
Lauri Niinistö ◽  
Eero Rauhala
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Oxide Thin Films

scholarly journals Reliability enhancement in thin film transistors using Hf and Al co-incorporated ZnO active channels deposited by atomic-layer-deposition

RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
Layer Deposition ◽  
Reliability Enhancement ◽  
Active Channels

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.

Effect of Growth Pressure on PLD‐Deposited Gallium Oxide Thin Films for Deep‐UV Photodetectors

2019 ◽  
Vol 216 (20) ◽  
pp. 1900098 ◽  
Author(s):  
Nicholas Blumenschein ◽  
Tania Paskova ◽  
John F. Muth
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Oxide Thin Films ◽  
Growth Pressure ◽  
Uv Photodetectors ◽  
Deep Uv

scholarly journals Optical constants of titanium-doped gallium oxide thin films

2019 ◽  
Vol 96 ◽  
pp. 109223 ◽  
Author(s):  
Sandeep Manandhar ◽  
Anil K. Battu ◽  
Cristian Orozco ◽  
C.V. Ramana
Keyword(s):  
Thin Films ◽  
Gallium Oxide ◽  
Optical Constants ◽  
Oxide Thin Films
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