Kinetics of low-temperature activation of acceptors in magnesium-doped gallium nitride epilayers grown by metal-organic vapor-phase epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 033703 ◽  
Author(s):  
E. Litwin-Staszewska ◽  
R. Piotrzkowski ◽  
L. Dmowski ◽  
P. Prystawko ◽  
R. Czernecki ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Temperature Activation ◽  
Kinetics Of

scholarly journals Study on electrical properties of n-GaN grown at low temperature by metal-organic vapor phase epitaxy

2008 ◽  
Vol 57 (9) ◽  
pp. 5923
Author(s):  
Wang Lai ◽  
Zhang Xian-Peng ◽  
Xi Guang-Yi ◽  
Zhao Wei ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

InGaAs/GaAsP superlattice solar cells with reduced carbon impurity grown by low-temperature metal-organic vapor phase epitaxy using triethylgallium

2014 ◽  
Vol 116 (20) ◽  
pp. 203101 ◽  
Author(s):  
Hiromasa Fujii ◽  
Kasidit Toprasertpong ◽  
Hassanet Sodabanlu ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Carbon Impurity ◽  
Organic Vapor ◽  
Metal Organic

On low temperature kinetic effects in metal–organic vapor phase epitaxy of III–V compounds

2001 ◽  
Vol 230 (1-2) ◽  
pp. 232-238 ◽  
Author(s):  
R.A. Talalaev ◽  
E.V. Yakovlev ◽  
S.Yu. Karpov ◽  
Yu.N. Makarov
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetic Effects

Reaction Kinetics of GaN Metal-Organic Vapor-Phase Epitaxy Analyzed by Multi-Scale Profiles of Growth Rate

2019 ◽  
Vol 25 (8) ◽  
pp. 507-512 ◽  
Author(s):  
Masakazu Sugiyama ◽  
Satoshi Yasukochi ◽  
Tomonari Shioda ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Growth Rate ◽  
Reaction Kinetics ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multi Scale ◽  
Organic Vapor ◽  
Metal Organic ◽  
Kinetics Of

The Chemistry of GaN Growth

2000 ◽  
Vol 639 ◽  
Author(s):  
T.F. Kuech ◽  
Shulin Gu ◽  
Ramchandra Wate ◽  
Ling Zhang ◽  
Jingxi Sun ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Density Functional ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Computational Techniques ◽  
Organic Vapor ◽  
Metal Organic ◽  
Experimental Approaches ◽  
Underlying Mechanisms ◽  
Kinetics Of

ABSTRACTThe development of new chemically based growth techniques has opened the range of possible GaN applications. This paper reviews some of the challenges in the chemically based growth of GaN and related materials. Ammonothermal-based growth, hydride vapor phase epitaxy and metal organic vapor phase epitaxy (MOVPE) are chemically complex systems wherein the underlying mechanisms of growth are not well understood at present. All these systems require substantial experimental and theoretical efforts to determine the nature and kinetics of GaN growth. In the case of metal organic vapor phase epitaxy, the application of computational techniques based on density functional theory have augmented the more conventional experimental approaches to determining the growth chemistry. These chemical reaction schemes, when combined with computational thermal-fluid models of the reactor environment, provide the opportunity to predict growth rates, uniformity and eve ntually materials properties.

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