A Global Defect Chemistry Model for p-Type Mixed Ionic and Electronic Conductors

2019 ◽  
Vol 25 (2) ◽  
pp. 2807-2814 ◽  
Author(s):  
Xiao-Dong Zhou ◽  
Harlan Anderson
Keyword(s):  
Defect Chemistry ◽  
P Type ◽  
Electronic Conductors ◽  
Global Defect

scholarly journals Understanding doping anomalies in degenerate p-type semiconductor LaCuOSe

2014 ◽  
Vol 2 (17) ◽  
pp. 3429-3438 ◽  
Author(s):  
David O. Scanlon ◽  
John Buckeridge ◽  
C. Richard A. Catlow ◽  
Graeme W. Watson
Keyword(s):  
Dft Calculations ◽  
Band Gap ◽  
State Of The Art ◽  
Wide Band ◽  
Defect Chemistry ◽  
Wide Band Gap ◽  
Type Semiconductor ◽  
P Type

Using state-of-the-art hybrid DFT calculations we explain the defect chemistry of LaCuOSe, a poorly understood wide band gap p-type conductor.

scholarly journals High performance ambipolar organic mixed ionic-electronic conductor for adaptive logic circuits and neuromorphic electronics

2021 ◽  
Author(s):  
Yanxi Zhang ◽  
Eveline van Doremaele ◽  
Gang Ye ◽  
Tim Stevens ◽  
Jun Song ◽  
...  
Keyword(s):  
High Performance ◽  
Logic Circuits ◽  
Adaptive Logic ◽  
Memory Element ◽  
Adaptive Circuits ◽  
Mixed Ionic Electronic Conductor ◽  
Mixed Ionic Electronic Conductors ◽  
P Type ◽  
Electronic Conductors ◽  
Monitoring Devices

Organic mixed ionic-electronic conductors (OMIECs) are central to bioelectronic applications such as biosensors, health monitoring devices and neural interfaces, and have facilitated efficient next-generation brain-inspired computing and biohybrid systems. Most OMIECs are hole-conducting (p-type) materials, while complimentary logic circuits and various biosensors require electron-conducting (n-type) materials too. Here we show an ambipolar mixed ionic-electronic polymer that achieves high on/off ratios with high ambient p- and n- type stability. We highlight the versatility of the material by demonstrating its use as a neuromorphic memory element, an adaptable ambipolar complementary logic inverter, and a neurotransmitter sensor. The ambipolar operation of this material allows for straightforward monolithic fabrication and integration, and opens a route towards more sophisticated complex logic and adaptive circuits.

scholarly journals Some Aspects of Defect Chemistry in P-Type Perovskite Conductors

2005 ◽  
Vol 2005-07 (1) ◽  
pp. 1479-1486
Author(s):  
Xiao-Dong Zhou
Keyword(s):  
Defect Chemistry ◽  
P Type

Understanding the p-type defect chemistry of CuCrO2

2011 ◽  
Vol 21 (11) ◽  
pp. 3655 ◽  
Author(s):  
David O. Scanlon ◽  
Graeme W. Watson
Keyword(s):  
Defect Chemistry ◽  
Type Defect ◽  
P Type

Dislocations, Ordering and Antiferromagnetic Domains in MnO

1970 ◽  
Vol 28 ◽  
pp. 522-523
Author(s):  
D. J. Barber ◽  
R. G. Evans
Keyword(s):  
Electron Diffraction ◽  
Single Crystal ◽  
Optical Microscopy ◽  
Defect Chemistry ◽  
Magnetic Structures ◽  
Optically Transparent ◽  
Magnetic Features ◽  
Antiferromagnetic Domains

Manganese (II) oxide, MnO, in common with CoO, NiO and FeO, possesses the NaCl structure and shows antiferromagnetism below its Neel point, Tn∼ 122 K. However, the defect chemistry of the four oxides is different and the magnetic structures are not identical. The non-stoichiometry in MnO2 small (∼2%) and below the Tn the spins lie in (111) planes. Previous work reported observations of magnetic features in CoO and NiO. The aim of our work was to find explanations for certain resonance results on antiferromagnetic MnO.Foils of single crystal MnO were prepared from shaped discs by dissolution in a mixture of HCl and HNO3. Optical microscopy revealed that the etch-pitted foils contained cruciform-shaped precipitates, often thick and proud of the surface but red-colored when optically transparent (MnO is green). Electron diffraction and probe microanalysis indicated that the precipitates were Mn2O3, in contrast with recent findings of Co3O4 in CoO.

Interface morphology of thermal oxide grown on polycrystalline silicon by different processes

1992 ◽  
Vol 50 (2) ◽  
pp. 1396-1397
Author(s):  
H. Yen ◽  
E. P. Kvam ◽  
R. Bashir ◽  
S. Venkatesan ◽  
G. W. Neudeck
Keyword(s):  
Integrated Circuits ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Interface Morphology ◽  
Oxide Interface ◽  
Poly Silicon ◽  
Thermal Oxide ◽  
Grain Orientations ◽  
Polycrystalline Silicon Films ◽  
P Type

Polycrystalline silicon, when highly doped, is commonly used in microelectronics applications such as gates and interconnects. The packing density of integrated circuits can be enhanced by fabricating multilevel polycrystalline silicon films separated by insulating SiO2 layers. It has been found that device performance and electrical properties are strongly affected by the interface morphology between polycrystalline silicon and SiO2. As a thermal oxide layer is grown, the poly silicon is consumed, and there is a volume expansion of the oxide relative to the atomic silicon. Roughness at the poly silicon/thermal oxide interface can be severely deleterious due to stresses induced by the volume change during oxidation. Further, grain orientations and grain boundaries may alter oxidation kinetics, which will also affect roughness, and thus stress.Three groups of polycrystalline silicon films were deposited by LPCVD after growing thermal oxide on p-type wafers. The films were doped with phosphorus or arsenic by three different methods.

Determination of arsenic atom distribution arsenic doped silicon using HOLZ-line analysis

1996 ◽  
Vol 54 ◽  
pp. 976-977
Author(s):  
Y. Kikuchi ◽  
N. Hashikawa ◽  
F. Uesugi ◽  
E. Wakai ◽  
K. Watanabe ◽  
...  
Keyword(s):  
Inelastic Scattering ◽  
Zone Axis ◽  
Experimental Result ◽  
Background Intensity ◽  
Crystal Thickness ◽  
Arsenic Atom ◽  
Doped Silicon ◽  
P Type ◽  
Line Analysis

In order to measure the concentration of arsenic atoms in nanometer regions of arsenic doped silicon, the HOLZ analysis is carried out underthe exact [011] zone axis observation. In previous papers, it is revealed that the position of two bright lines in the outer SOLZ structures on the[011] zone axis is little influenced by the crystal thickness and the background intensity caused by inelastic scattering electrons, but is sensitive to the concentration of As atoms substitutbnal for Siatomic site.As the result, it becomes possible to determine the concentration of electrically activated As atoms in silicon within an observed area by means of the simple fitting between experimental result and dynamical simulatioan. In the present work, in order to investigate the distribution of electrically activated As in silicon, the outer HOLZ analysis is applied using a nanometer sized probe of TEM equipped with a FEG.Czodiralsld-gown<100>orientated p-type Si wafers with a resistivity of 10 Ώ cm are used for the experiments.TheAs+ implantation is performed at a dose of 5.0X1015cm-2at 25keV.

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