Tunnel Field-Effect Transistors for Future Low-Power Nano-Electronics

2019 ◽  
Vol 25 (7) ◽  
pp. 455-462 ◽  
Author(s):  
Anne S. Verhulst ◽  
William G. Vandenberghe ◽  
Daniele Leonelli ◽  
Rita Rooyackers ◽  
Anne Vandooren ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

CARBON TUBE-BASED NANOTRANSISTORS

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Conducting Channel ◽  
Carbon Tube

В статье рассмотрены нанотранзисторы и основные свойства нанотрубок. Представлен обзор CNTFET транзисторов и основные особенности технологии их изготовления. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. Проводящий канал CNTFET представляет собой углеродную нанотрубку. The article deals with nanotransistors and the main properties of nanotubes. An overview of CNTFET transistors and the main features of their manufacturing technology is presented. Carbon nanotube field effect transistors (CNTFETs) are promising nanoscale devices for implementing high-performance circuits with very dense and low power. The CNTFET conducting channel is a carbon nanotube.

scholarly journals A Simulation Study of a Gate-All-Around Nanowire Transistor with a Core–Insulator

Micromachines ◽  
2020 ◽  
Vol 11 (2) ◽  
pp. 223 ◽  
Author(s):  
Yannan Zhang ◽  
Ke Han ◽  
and Jiawei Li
Keyword(s):  
Metal Oxide ◽  
Low Power ◽  
Energy Efficient ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Future Generation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ultra Low Power

Ultra-low power and high-performance logical devices have been the driving force for the continued scaling of complementary metal oxide semiconductor field effect transistors which greatly enable electronic devices such as smart phones to be energy-efficient and portable. In the pursuit of smaller and faster devices, researchers and scientists have worked out a number of ways to further lower the leaking current of MOSFETs (Metal oxide semiconductor field effect transistor). Nanowire structure is now regarded as a promising candidate of future generation of logical devices due to its ultra-low off-state leaking current compares to FinFET. However, the potential of nanowire in terms of off-state current has not been fully discovered. In this article, a novel Core–Insulator Gate-All-Around (CIGAA) nanowire has been proposed, investigated, and simulated comprehensively and systematically based on 3D numerical simulation. Comparisons are carried out between GAA and CIGAA. The new CIGAA structure exhibits low off-state current compares to that of GAA, making it a suitable candidate of future low-power and energy-efficient devices.

Compact Low-Power Analog-to-Digital Converters using Multi-State Spatial Wavefunction-Switched (SWS) FETs

2014 ◽  
Vol 23 (01n02) ◽  
pp. 1450005
Author(s):  
Murali Lingalugari ◽  
John Chandy ◽  
Faquir Jain ◽  
El-Sayed Hasaneen ◽  
Evan Heller
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Analog To Digital Converters ◽  
Data Conversion ◽  
Low Power Consumption ◽  
Quantum Mechanical ◽  
Multiple Quantum ◽  
Analog To Digital ◽  
Electron Wavefunction

In this paper, we propose a new architecture for analog-to-digital converters (ADCs) using multistate spatial wavefunction-switched field-effect transistors (SWSFETs). SWSFETs are multiple quantum coupled well devices, where the wells are stacked vertically and the electron wavefunction switches from one well to another with the change in gate voltage. Quantum mechanical simulations of 3-well InGaAs-AlInAs SWSFET structures are presented. The designs and simulations of 2-bit and 3-bit ADCs using SWSFETs result in low power consumption and reduced device count which improves the speed of the data conversion.

scholarly journals Electric Double Layer Field-Effect Transistors Using Two-Dimensional (2D) Layers of Copper Indium Selenide (CuIn7Se11)

Electronics ◽  
2019 ◽  
Vol 8 (6) ◽  
pp. 645 ◽  
Author(s):  
Prasanna D. Patil ◽  
Sujoy Ghosh ◽  
Milinda Wasala ◽  
Sidong Lei ◽  
Robert Vajtai ◽  
...  
Keyword(s):  
Ionic Liquid ◽  
Low Power ◽  
Double Layer ◽  
Electric Double Layer ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Indium Selenide ◽  
Copper Indium Selenide ◽  
Two Dimensional ◽  
Copper Indium

Innovations in the design of field-effect transistor (FET) devices will be the key to future application development related to ultrathin and low-power device technologies. In order to boost the current semiconductor device industry, new device architectures based on novel materials and system need to be envisioned. Here we report the fabrication of electric double layer field-effect transistors (EDL-FET) with two-dimensional (2D) layers of copper indium selenide (CuIn7Se11) as the channel material and an ionic liquid electrolyte (1-Butyl-3-methylimidazolium hexafluorophosphate (BMIM-PF6)) as the gate terminal. We found one order of magnitude improvement in the on-off ratio, a five- to six-times increase in the field-effect mobility, and two orders of magnitude in the improvement in the subthreshold swing for ionic liquid gated devices as compared to silicon dioxide (SiO2) back gates. We also show that the performance of EDL-FETs can be enhanced by operating them under dual (top and back) gate conditions. Our investigations suggest that the performance of CuIn7Se11 FETs can be significantly improved when BMIM-PF6 is used as a top gate material (in both single and dual gate geometry) instead of the conventional dielectric layer of the SiO2 gate. These investigations show the potential of 2D material-based EDL-FETs in developing active components of future electronics needed for low-power applications.

Monolayer Hexagonal Boron Nitride Tunnel Barrier Contact for Low-Power Black Phosphorus Heterojunction Tunnel Field-Effect Transistors

Nano Letters ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 3963-3969 ◽  
Author(s):  
Seungho Kim ◽  
Gyuho Myeong ◽  
Jihoon Park ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Hexagonal Boron Nitride ◽  
Black Phosphorus ◽  
Tunnel Barrier

scholarly journals Low-power-consumption organic field-effect transistors

2020 ◽  
Vol 3 (1) ◽  
pp. 014009 ◽  
Author(s):  
Yiwei Duan ◽  
Bowen Zhang ◽  
Shizan Zou ◽  
Chuqi Fang ◽  
Qijing Wang ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Power Consumption ◽  
Organic Field Effect Transistors
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