Electrochemical processes for the production of copper interconnects on non-metallic barrier layers

2019 ◽  
Vol 25 (7) ◽  
pp. 303-314
Author(s):  
David J. Duquette
Keyword(s):  
Copper Interconnects ◽  
Barrier Layers ◽  
Electrochemical Processes

In Situ Study of Barrier Layers Using Spectroscopic Ellipsometry and Mass Spectroscopy of Recoiled Ions

2000 ◽  
Vol 619 ◽  
Author(s):  
Y. Gao ◽  
A.H. Mueller ◽  
E.A. Irene ◽  
O. Auciello ◽  
A.R. Krauss ◽  
...  
Keyword(s):  
Real Time ◽  
Mass Spectroscopy ◽  
Spectroscopic Ellipsometry ◽  
Nitrogen Concentration ◽  
Random Access ◽  
Copper Interconnects ◽  
Access Memory ◽  
Barrier Layers ◽  
The Stability

ABSTRACTAn in situ study of barrier layers using spectroscopic ellipsometry (SE) and Time-of-Flight (ToF) mass spectroscopy of recoiled ions (MSRI) is presented. First the formation of copper silicides has been observed by real-time SE and in situ MSRI in annealed Cu/Si samples. Second TaSiN films as barrier layers for copper interconnects were investigated. Failure of the TaSiN layers in Cu/TaSiN/Si samples was detected by real-time SE during annealing and confirmed by in situ MSRI. The effect of nitrogen concentration on TaSiN film performance as a barrier was also examined. The stability of both TiN and TaSiN films as barriers for electrodes for dynamic random access memory (DRAM) devices has been studied. It is shown that a combination of in situ SE and MSRI can be used to monitor the evolution of barrier layers and detect the failure of barriers in real-time.

Adhesion and reliability of copper interconnects with Ta and TaN barrier layers

2000 ◽  
Vol 15 (1) ◽  
pp. 203-211 ◽  
Author(s):  
Michael Lane ◽  
Reinhold H. Dauskardt ◽  
Nety Krishna ◽  
Imran Hashim
Keyword(s):  
Quantitative Data ◽  
Copper Interconnects ◽  
Interface Fracture ◽  
Copper Metallization ◽  
Interfacial Chemistry ◽  
Adhesive Properties ◽  
Barrier Layers ◽  
Metal Plasma ◽  
Cu Interconnect ◽  
Metal Layers

With the advent of copper metallization in interconnect structures, new barrier layers are required to prevent copper diffusion into adjacent dielectrics and the underlying silicon. The barrier must also provide adequate adhesion to both the dielectric and copper. While Ta and TaN barrier layers have been incorporated for these purposes in copper metallization schemes, little quantitative data exist on their adhesive properties. In this study, the critical interface fracture energy and the subcritical debonding behavior of ion-metal-plasma sputtered Ta and TaN barrier layers in Cu interconnect structures were investigated. Specifically, the effects of interfacial chemistry, Cu layer thickness, and oxide type were examined. Behavior is rationalized in terms of relevant reactions at the barrier/dielectric interface and plasticity in adjacent metal layers.

Comparative study of novel barrier layers in ULSI copper interconnects

2007 ◽  
Vol 84 (11) ◽  
pp. 2486-2490 ◽  
Author(s):  
Kai Wang ◽  
Alton Horsfall ◽  
Alan Cuthbertson ◽  
Steve Bull ◽  
Anthony O’Neill
Keyword(s):  
Comparative Study ◽  
Copper Interconnects ◽  
Barrier Layers

Via resistance and reliability trends in copper interconnects with ultra-scaled barrier layers

2020 ◽  
Vol 116 (16) ◽  
pp. 164103
Author(s):  
Nicholas A. Lanzillo ◽  
Koichi Motoyama ◽  
Huai Huang ◽  
Robert R. Robison ◽  
Terry Spooner
Keyword(s):  
Copper Interconnects ◽  
Barrier Layers

The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  
Keyword(s):  
Thin Films ◽  
Adhesion Strength ◽  
Nitrogen Concentration ◽  
Scratch Test ◽  
Barrier Structure ◽  
Barrier Layers ◽  
Cu Metallization ◽  
Microstructure Observation ◽  
Sputter Deposited ◽  
Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

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