Low-temperature Oxidation of Semiconductor Surfaces by use of a Novel High-density Microwave Plasma Apparatus

2019 ◽  
Vol 25 (7) ◽  
pp. 185-192
Author(s):  
Alexander Gschwandtner ◽  
Wilfried Lerch
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
High Density ◽  
Semiconductor Surfaces ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation

Low-temperature processing of semiconductor surfaces by use of a high-density microwave plasma

2009 ◽  
Vol 24 (5) ◽  
pp. 052001 ◽  
Author(s):  
W Lerch ◽  
A Gschwandtner ◽  
S Schneider ◽  
T Theiler ◽  
Z Nenyei ◽  
...  
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
High Density ◽  
Semiconductor Surfaces ◽  
Low Temperature Processing

Low-Temperature Oxidation of Silicon(100) Substrates Using Atomic Oxygen

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Ueno ◽  
S. Chikamura ◽  
F. Sakuraba ◽  
Y Iwasaki
Keyword(s):  
Low Temperature ◽  
Atomic Oxygen ◽  
Microwave Plasma ◽  
Parabolic Rate Constant ◽  
Oxide Thickness ◽  
Rare Gas ◽  
Processing Temperature ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Plasma Energy

ABSTRACTLow temperature oxidation process of Si(100) substrates using atomic oxygen has been proposed. For the generation of atomic oxygen, microwave plasma remotely attached on the oxidation chamber was used. In the microwave plasma, the large amount of rare gas and a small amount of 02 gas mixture was supplied. The existence of the large amount of rare gas controls the plasma energy to some restricted values associated with the metastable states of the rare gas. Consequently, using Kr as mixed rare gas, atomic oxygen were efficiently generated instead of excited 02 molecules with any vibrational or ionized states. The oxidation kinetics of crystalline Si using this process was shown to be diffusion limiting, even if the oxide thickness was less than several nm. The activation energy of B, which is referred to as the parabolic rate constant, was found to be as low as 0.14eV In addition, lower interface trap density of 2.6 × 1011/cm2/eV at the mid gap could be achieved for the as-grown SiO2/Si(100) interface at the processing temperature of 500C.

scholarly journals Influence of Co-Precipitation Agent on the Structure, Texture and Catalytic Activity of Au-CeO2 Catalysts in Low-Temperature Oxidation of Benzyl Alcohol

Catalysts ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 641
Author(s):  
Lukasz Wolski ◽  
Grzegorz Nowaczyk ◽  
Stefan Jurga ◽  
Maria Ziolek
Keyword(s):  
Gold Nanoparticles ◽  
Catalytic Activity ◽  
Low Temperature ◽  
Benzyl Alcohol ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Oxidation Of Benzyl Alcohol ◽  
Key Factor ◽  
Au Particle Size ◽  
Co Precipitation

The aim of the study was to establish the influence of a co-precipitation agent (i.e., NaOH–immediate precipitation; hexamethylenetetramine/urea–gradual precipitation and growth of nanostructures) on the properties and catalytic activity of as-synthesized Au-CeO2 nanocomposites. All catalysts were fully characterized with the use of XRD, nitrogen physisorption, ICP-OES, SEM, HR-TEM, UV-vis, XPS, and tested in low-temperature oxidation of benzyl alcohol as a model oxidation reaction. The results obtained in this study indicated that the type of co-precipitation agent has a significant impact on the growth of gold species. Immediate co-precipitation of Au-CeO2 nanostructures with the use of NaOH allowed obtainment of considerably smaller and more homogeneous in size gold nanoparticles than those formed by gradual co-precipitation and growth of Au-CeO2 nanostructures in the presence of hexamethylenetetramine or urea. In the catalytic tests, it was established that the key factor promoting high activity in low-temperature oxidation of benzyl alcohol was size of gold nanoparticles. The highest conversion of the alcohol was observed for the catalyst containing the smallest Au particle size (i.e., Au-CeO2 nanocomposite prepared with the use of NaOH as a co-precipitation agent).

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