Removal of Post-dry Etch Residue uing Ultra Low Environmental Load Technique

2019 ◽  
Vol 25 (5) ◽  
pp. 249-256 ◽  
Author(s):  
Atsushi Hayashida ◽  
Akiko Seki ◽  
Takashi Mashiko ◽  
Toshiyuki Sanada ◽  
Masao Watanabe
2003 ◽  
Vol 42 (24) ◽  
pp. 6096-6103 ◽  
Author(s):  
Bing-Hung Chen ◽  
Hao Zhang ◽  
Chooi ◽  
Lap Chan ◽  
Y. Xu ◽  
...  
Keyword(s):  
Dry Etch ◽  

2016 ◽  
Vol 255 ◽  
pp. 232-236
Author(s):  
Makonnen Payne ◽  
Steven Lippy ◽  
Ruben R. Lieten ◽  
Els Kesters ◽  
Quoc Toan Le ◽  
...  

In the BEOL, as interconnect dimensions shrink and novel materials are used, it has become increasingly difficult for traditional PERR removal chemicals to meet the evolving material compatibility requirements. As a result, formulated cleans that specifically target these unique challenges are required. Two formulated BEOL cleans were evaluated on blanket and patterned wafer coupons for their ability to wet etch titanium nitride (TiN) and clean post-plasma etch residue, while remaining compatible to interconnect metals (Cu and W) and low-k dielectric (k = 2.4). Both, showed an improvement in material compatibility relative to dilute HF, while simultaneously being able to remove the TiN hardmask and post-etch residue, leading > 90% yield on test structures of varying sizes.


Author(s):  
K.A. Mohammad ◽  
L.J. Liu ◽  
S.F. Liew ◽  
S.F. Chong ◽  
D.G. Lee ◽  
...  

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.


2020 ◽  
Vol 70 (3) ◽  
pp. 97-106
Author(s):  
S.N. GLAGOLEV ◽  
◽  
A.G. SHEVTSOVA ◽  
V.V. VASILEVA ◽  
◽  
...  

2020 ◽  
Vol 59 (SI) ◽  
pp. SIIC02
Author(s):  
Norikatsu Sasao ◽  
Shinobu Sugimura ◽  
Koji Asakawa
Keyword(s):  
Dry Etch ◽  

2004 ◽  
Vol 14 (8) ◽  
pp. 573-578
Author(s):  
Ohsung Song ◽  
Sungjin Beom ◽  
Dugjoong Kim
Keyword(s):  

1995 ◽  
Vol 31 (7) ◽  
pp. 51-59 ◽  
Author(s):  
Ian Guymer ◽  
Rob O'Brien

Previously, the design of sewer systems has been limited to studies of their hydraulic characteristics, in particular the ability of the system to convey the maximum discharge. Greater environmental awareness has necessitated that new designs, and some existing schemes, are assessed to determine the environmental load which the scheme will deliver to any downstream component. This paper describes a laboratory programme which has been designed to elucidate the effects of manholes on the longitudinal dispersion of solutes. A laboratory system is described, which allows in situ measurements to be taken of the concentration of a fluorescent solute tracer, both up- and down-stream of a surcharged manhole junction. Results are presented from a preliminary series of studies undertaken for a single manhole geometry over a range of discharges, with varying levels of surcharge. Results are presented showing the variation of travel time, change in second moment of the distribution and of a dispersion factor with surcharge, assuming a Taylor approach and determining the dispersion factor using a ‘change in moment’ method. The effect of the stored volume within the manhole is clearly evident. The limitations and the applicability of this approach are discussed.


1992 ◽  
Vol 28 (5) ◽  
pp. 448 ◽  
Author(s):  
S.J. Pearton ◽  
U.K. Chakrabarti ◽  
D. Coblentz ◽  
F. Ren ◽  
T.R. Fullowan ◽  
...  
Keyword(s):  

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