Oxygen Plasma Treated Aluminum as a Gate Dielectric for AlGaN/GaN High Electron Mobility Transistors

S. Lawrence Selvaraj; Takashi Egawa

doi:10.1149/1.3156653

Oxygen Plasma Treated Aluminum as a Gate Dielectric for AlGaN/GaN High Electron Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.3156653 ◽

2009 ◽

Vol 156 (9) ◽

pp. H690 ◽

Cited By ~ 8

Author(s):

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Electron Mobility ◽

Oxygen Plasma ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Oxygen-plasma-based digital etching for GaN/AlGaN high electron mobility transistors

2019 IEEE 13th International Conference on ASIC (ASICON) ◽

10.1109/asicon47005.2019.8983678 ◽

2019 ◽

Author(s):

Jingyi Wu ◽

Hongyu Yu ◽

Yang Jiang ◽

Zeyu Wan ◽

Siqi Lei ◽

...

Keyword(s):

Electron Mobility ◽

Oxygen Plasma ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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A Simple Gate-Dielectric Fabrication Process for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

IEEE Electron Device Letters ◽

10.1109/led.2012.2197370 ◽

2012 ◽

Vol 33 (7) ◽

pp. 997-999 ◽

Cited By ~ 27

Author(s):

Han-Yin Liu ◽

Bo-Yi Chou ◽

Wei-Chou Hsu ◽

Ching-Sung Lee ◽

Chiu-Sheng Ho

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Fabrication Process ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

Semiconductor Science and Technology ◽

10.1088/0268-1242/28/2/029501 ◽

2012 ◽

Vol 28 (2) ◽

pp. 029501 ◽

Cited By ~ 1

Author(s):

M Lachab ◽

M Sultana ◽

H Fatima ◽

V Adivarahan ◽

Q Fareed ◽

...

Keyword(s):

Direct Current ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Current Collapse

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Physical and electrical characteristics of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with rare earth Er2O3 as a gate dielectric

Thin Solid Films ◽

10.1016/j.tsf.2013.01.028 ◽

2013 ◽

Vol 544 ◽

pp. 526-529 ◽

Cited By ~ 7

Author(s):

Ray-Ming Lin ◽

Fu-Chuan Chu ◽

Atanu Das ◽

Sheng-Yu Liao ◽

Shu-Tsun Chou ◽

...

Keyword(s):

Rare Earth ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

Electrical Characteristics ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

Applied Physics Express ◽

10.7567/apex.8.111001 ◽

2015 ◽

Vol 8 (11) ◽

pp. 111001 ◽

Cited By ~ 12

Author(s):

Joel T. Asubar ◽

Yoshiki Sakaida ◽

Satoshi Yoshida ◽

Zenji Yatabe ◽

Hirokuni Tokuda ◽

...

Keyword(s):

Plasma Treatment ◽

Electron Mobility ◽

Oxygen Plasma ◽

High Electron Mobility Transistors ◽

Oxygen Plasma Treatment ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation

Solid-State Electronics ◽

10.1016/s0038-1101(03)00138-2 ◽

2003 ◽

Vol 47 (10) ◽

pp. 1781-1786 ◽

Cited By ~ 14

Author(s):

B. Luo ◽

R. Mehandru ◽

Jihyun Kim ◽

F. Ren ◽

B.P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

Surface Passivation ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

High Electron ◽

Power Performance ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment

Applied Physics Express ◽

10.7567/1882-0786/ab0b78 ◽

2019 ◽

Vol 12 (5) ◽

pp. 051001

Author(s):

Chi Sun ◽

Ronghui Hao ◽

Ning Xu ◽

Tao He ◽

Fengfeng Shi ◽

...

Keyword(s):

Plasma Treatment ◽

Electron Mobility ◽

Oxygen Plasma ◽

High Electron Mobility Transistors ◽

Oxygen Plasma Treatment ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Material and device characterizations of AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors with reactive-sputtered HfO2 gate dielectric

2006 64th Device Research Conference ◽

10.1109/drc.2006.305144 ◽

2006 ◽

Author(s):

Chang Liu ◽

Eng Chor ◽

Leng Tan

Keyword(s):

Metal Oxide ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3581090 ◽

2011 ◽

Vol 29 (3) ◽

pp. 031204 ◽

Cited By ~ 8

Author(s):

Hyeongnam Kim ◽

Michael L. Schuette ◽

Wu Lu

Keyword(s):

Plasma Treatment ◽

Plasma Etching ◽

Electron Mobility ◽

Oxygen Plasma ◽

High Electron Mobility Transistors ◽

Oxygen Plasma Treatment ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04df03 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DF03 ◽

Cited By ~ 10

Author(s):

Joseph J. Freedsman ◽

Toshiharu Kubo ◽

S. Lawrence Selvaraj ◽

Takashi Egawa

Keyword(s):

Metal Oxide ◽

Breakdown Voltage ◽

Electron Mobility ◽

Gate Dielectric ◽

High Electron Mobility Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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