Cl2/BCl3/Ar plasma etching and in situ oxygen plasma treatment for leakage current suppression in AlGaN/GaN high-electron mobility transistors

2011 ◽  
Vol 29 (3) ◽  
pp. 031204 ◽  
Author(s):  
Hyeongnam Kim ◽  
Michael L. Schuette ◽  
Wu Lu
Keyword(s):  
Plasma Treatment ◽  
Plasma Etching ◽  
Electron Mobility ◽  
Oxygen Plasma ◽  
High Electron Mobility Transistors ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

2015 ◽  
Vol 8 (11) ◽  
pp. 111001 ◽  
Author(s):  
Joel T. Asubar ◽  
Yoshiki Sakaida ◽  
Satoshi Yoshida ◽  
Zenji Yatabe ◽  
Hirokuni Tokuda ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Electron Mobility ◽  
Oxygen Plasma ◽  
High Electron Mobility Transistors ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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