Charge Trapping Related Degradation of Thin HfAlO∕SiO[sub 2] Gate Dielectric Stack during Constant-Voltage Stress

2009 ◽  
Vol 156 (8) ◽  
pp. H661 ◽  
Author(s):  
Piyas Samanta ◽  
Chin-Lung Cheng ◽  
Yao-Jen Lee
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Constant Voltage ◽  
Voltage Stress

Behavior of Local Charge-Trapping Sites in La2O3–Al2O3Composite Films under Constant Voltage Stress

2007 ◽  
Vol 46 (4B) ◽  
pp. 1879-1884 ◽  
Author(s):  
Toshifumi Sago ◽  
Akiyoshi Seko ◽  
Mitsuo Sakashita ◽  
Akira Sakai ◽  
Masaki Ogawa ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Constant Voltage ◽  
Local Charge ◽  
Voltage Stress ◽  
Trapping Sites

Constant voltage stress induced degradation in HfO[sub 2]/SiO[sub 2] gate dielectric stacks

2002 ◽  
Vol 91 (12) ◽  
pp. 10127 ◽  
Author(s):  
Zhen Xu ◽  
Michel Houssa ◽  
Richard Carter ◽  
Mohamed Naili ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Constant Voltage ◽  
Voltage Stress

Nitrided Gate Dielectrics and Charge-to-Breakdown Test

1996 ◽  
Vol 429 ◽  
Author(s):  
S. Dimitrijev ◽  
P. Tanner ◽  
H. B. Harrison ◽  
D. Sweatman
Keyword(s):  
Stress Field ◽  
Silicon Dioxide ◽  
Positive Charge ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Time Dependent ◽  
Dielectric Films ◽  
Charge Accumulation ◽  
Constant Voltage ◽  
Voltage Stress

AbstractIn this paper, the applicability of the charge-to-breakdown test for characterisation and comparison of differently grown ultra-thin gate dielectric films is considered. It is shown that the charge-to-breakdown parameter cannot be reliably used, because it is related to the electrons tunneling through the film, and not to the mechanism of positive charge accumulation which leads to time-dependent breakdown. It is found that the constant-voltage stress provides a consistent set of stress field vs time-to-breakdown data. Nitrided gate dielectrics show improved breakdown characteristics, compared to standard silicon-dioxide films.

“Smart” TDDB algorithm for investigating degradation in high-κ gate dielectric stacks under constant voltage stress

2009 ◽  
Vol 86 (3) ◽  
pp. 287-290 ◽  
Author(s):  
Chadwin D. Young ◽  
Gennadi Bersuker ◽  
Joey Tun ◽  
Rino Choi ◽  
Dawei Heh ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Constant Voltage ◽  
Voltage Stress

Impact of Charge Trapping and Constant Voltage Stress on Epitaxial p-Ge-on-p-Si and HfO2 based Al/HfO2/p-Ge-on-p-Si/Al structures

2021 ◽  
pp. 1-1
Author(s):  
Sumit Choudhary ◽  
Daniel Schwarz ◽  
Hannes Funk ◽  
Robin Khosla ◽  
Satinder Kumar Sharma ◽  
...  
Keyword(s):  
Charge Trapping ◽  
Constant Voltage ◽  
Voltage Stress

Behavior of Local Charge Trapping Sites in La2O3-Al2O3 Composite Films under Constant Voltage Stress

2006 ◽  
Author(s):  
Toshifumi Sago ◽  
Akiyoshi Seko ◽  
Mitsuo Sakashita ◽  
Akira Sakai ◽  
Masaki Ogawa ◽  
...  
Keyword(s):  
Composite Films ◽  
Charge Trapping ◽  
Constant Voltage ◽  
Local Charge ◽  
Al2o3 Composite ◽  
Voltage Stress ◽  
Trapping Sites
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