Temperature-Dependent PL Intensity in FLA-Synthesized and Hydrogen-Modified Silica Layers with Silicon Nanocrystals

2019 ◽  
Vol 16 (40) ◽  
pp. 105-111 ◽  
Author(s):  
Vladimir Volodin ◽  
Victor Stuchinsky ◽  
Svetlana Cherkova ◽  
Grigory Kachurin ◽  
Rossen Yankov
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Modified Silica ◽  
Silica Layers ◽  
Pl Intensity

scholarly journals Influence of Oxidation on Temperature-Dependent Photoluminescence Properties of Hydrogen-Terminated Silicon Nanocrystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 143
Author(s):  
Batu Ghosh ◽  
Naoto Shirahata
Keyword(s):  
Silicon Nanocrystals ◽  
Surface Oxidation ◽  
Ambient Air ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
Three Samples ◽  
Peak Energy ◽  
Pl Intensity ◽  
Different Levels ◽  
Temperature Dependent Photoluminescence

In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperature ranging between room temperature (~297 K) and 4 K are measured to elucidate the underlying physics of the PL spectra influenced by the surface oxidation of ncSi-H. There are striking differences in the evolution of PL spectra according to the surface oxidation level. The PL intensity increases as the temperature decreases. ForncSi-H with a smaller amount of oxide, the PL intensity is nearly saturated at 90 K. In contrast, the PL intensity decreases even below 90 K for the heavilyoxidized ncSi-H. For all the samples, full-width at half maxima (FWHM)decreases as the temperature decreases. The plots of the PL peak energy as a function of temperature can be reproduced with an equation where the average phonon energy and other parameters are calculated.

Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO2 Matrix

2018 ◽  
Vol 34 (4) ◽  
pp. 513-516
Author(s):  
Tianning Zhang ◽  
Kenan Zhang ◽  
Xiren Chen ◽  
Shuxia Wang ◽  
Rongjun Zhang ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Sio2 Matrix ◽  
Temperature Dependent Photoluminescence

Intense Photoluminescence and Photoluminescence Enhancement of Silicon Nanocrystals by Ultraviolet Irradiation

2007 ◽  
Vol 31 ◽  
pp. 74-76 ◽  
Author(s):  
P.T. Huy ◽  
P.H. Duong
Keyword(s):  
Silicon Nanocrystals ◽  
Room Temperature ◽  
Laser Excitation ◽  
Uv Light ◽  
Irradiation Time ◽  
Excitation Wavelength ◽  
Nonradiative Recombination ◽  
Emission Yield ◽  
Recombination Centers ◽  
Pl Intensity

Photoluminescence (PL) from silicon nanocrystals deposited on top of silica-glass template and from silicon nanocrystals in nc_Si/SiO2 multilayer films were studied as a function of ultraviolet (UV) laser irradiation time in vacuum. Both the films exhibit intense visible PL at room temperature under laser excitation. It was found that upon prolong irradiation time using a He-Cd laser (325 nm) the PL intensity of the films was spectacularly enhanced. The process is reversible and does not happen with excitation wavelength longer than 400 nm. Upon introducing air into the measurement chamber, a rapid decrease of the PL intensity was recorded. This observation suggests that the UV light may lead to modification of nonradiative recombination centers in the films and thus improves the emission yield of silicon nanocrystals.

Wettability of modified silica layers deposited on glass support activated by plasma

2015 ◽  
Vol 353 ◽  
pp. 843-850 ◽  
Author(s):  
Konrad Terpiłowski ◽  
Diana Rymuszka ◽  
Olena V. Goncharuk ◽  
Iryna Ya. Sulym ◽  
Vladimir M. Gun’ko
Keyword(s):  
Modified Silica ◽  
Silica Layers ◽  
Glass Support

scholarly journals Photoluminescence properties of GaAsBi single quantum wells with 10% of Bi

2021 ◽  
Vol 61 (2) ◽  
Author(s):  
E. Dudutienė ◽  
A. Jasinskas ◽  
B. Čechavičius ◽  
R. Nedzinskas ◽  
M. Jokubauskaitė ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Optical Transition ◽  
Single Quantum ◽  
Temperature Dependent ◽  
Single Quantum Well ◽  
Recombination Mechanism ◽  
Carrier Recombination ◽  
Pl Intensity ◽  
Sharp Interfaces

A set of single quantum well (SQW) samples of GaAs1-xBix with x ~ 0.1 and p-doped GaAs barriers grown by molecular beam epitaxy was investigated by the temperature-dependent photoluminescence (PL) spectroscopy. Those GaAsBi SQW structures showed a high crystalline quality, a smooth surface and sharp interfaces between the layers and exhibited a high PL intensity and a lower than 100 meV PL linewidth of QW structures. Temperature dependence of the optical transition energy was S-shape-free for all investigated structures and it was weaker than that of GaAs. An analysis of the carrier recombination mechanism was also carried out indicating that the radiative recombination is dominant even at room temperature. Moreover, numerical calculations revealed that a higher Be doping concentration leads to an increased overlap of the electron and heavy hole wave functions and determines a higher PL intensity.

Temperature Dependent Photoluminescence of Size-Purified Silicon Nanocrystals

2013 ◽  
Vol 5 (10) ◽  
pp. 4233-4238 ◽  
Author(s):  
Austin R. Van Sickle ◽  
Joseph B. Miller ◽  
Christopher Moore ◽  
Rebecca J. Anthony ◽  
Uwe R. Kortshagen ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Somak Mitra ◽  
Vladimir Švrček ◽  
Manual Macias-Montero ◽  
Tamilselvan Velusamy ◽  
Davide Mariotti
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence
Sign in / Sign up

Export Citation Format

Share Document