scholarly journals Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Somak Mitra ◽  
Vladimir Švrček ◽  
Manual Macias-Montero ◽  
Tamilselvan Velusamy ◽  
Davide Mariotti
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-dependent Photoluminescence of Silicon Nanocrystals Embedded in SiO2 Matrix

2018 ◽  
Vol 34 (4) ◽  
pp. 513-516
Author(s):  
Tianning Zhang ◽  
Kenan Zhang ◽  
Xiren Chen ◽  
Shuxia Wang ◽  
Rongjun Zhang ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Sio2 Matrix ◽  
Temperature Dependent Photoluminescence

scholarly journals Influence of Oxidation on Temperature-Dependent Photoluminescence Properties of Hydrogen-Terminated Silicon Nanocrystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 143
Author(s):  
Batu Ghosh ◽  
Naoto Shirahata
Keyword(s):  
Silicon Nanocrystals ◽  
Surface Oxidation ◽  
Ambient Air ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
Three Samples ◽  
Peak Energy ◽  
Pl Intensity ◽  
Different Levels ◽  
Temperature Dependent Photoluminescence

In this study, we investigate temperature-dependent photoluminescence (PL) in three samples of hydrogen-terminated silicon nanocrystals (ncSi-H) with different levels of surface oxidation.ncSi-H was oxidized by exposure to ambient air for 0 h, 24 h, or 48 h. The PL spectra as a function of temperature ranging between room temperature (~297 K) and 4 K are measured to elucidate the underlying physics of the PL spectra influenced by the surface oxidation of ncSi-H. There are striking differences in the evolution of PL spectra according to the surface oxidation level. The PL intensity increases as the temperature decreases. ForncSi-H with a smaller amount of oxide, the PL intensity is nearly saturated at 90 K. In contrast, the PL intensity decreases even below 90 K for the heavilyoxidized ncSi-H. For all the samples, full-width at half maxima (FWHM)decreases as the temperature decreases. The plots of the PL peak energy as a function of temperature can be reproduced with an equation where the average phonon energy and other parameters are calculated.

Temperature Dependent Photoluminescence of Size-Purified Silicon Nanocrystals

2013 ◽  
Vol 5 (10) ◽  
pp. 4233-4238 ◽  
Author(s):  
Austin R. Van Sickle ◽  
Joseph B. Miller ◽  
Christopher Moore ◽  
Rebecca J. Anthony ◽  
Uwe R. Kortshagen ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Ensemble Effects in the Temperature-Dependent Photoluminescence of Silicon Nanocrystals

2019 ◽  
Vol 25 (12) ◽  
pp. 3061-3067 ◽  
Author(s):  
Matthias Jakob ◽  
Morteza Javadi ◽  
Jonathan G. C. Veinot ◽  
Al Meldrum ◽  
Aras Kartouzian ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Temperature Dependent ◽  
Ensemble Effects ◽  
Temperature Dependent Photoluminescence

Combustion Synthesis and Temperature Dependent Photoluminescence of Nanocrystalline Y2Zr2O7: Eu3+

2009 ◽  
Vol 24 (2) ◽  
pp. 239-242 ◽  
Author(s):  
Dian-Yuan WANG ◽  
Qing-Kai WANG ◽  
Zhang-Yong CHANG ◽  
Yan-Yan GUO ◽  
Xing-Hua WU
Keyword(s):  
Combustion Synthesis ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence from MEH-PPV and MEH-OPPV containing oxadiazole in the main chain

2006 ◽  
Vol 84 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
F. Kong ◽  
X.L. Wu ◽  
G.S. Huang ◽  
R.K. Yuan ◽  
C.Z. Yang ◽  
...  
Keyword(s):  
Main Chain ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

scholarly journals The thermal stability of FAPbBr3 nanocrystals from temperature-dependent photoluminescence and first-principles calculations

RSC Advances ◽  
2020 ◽  
Vol 10 (72) ◽  
pp. 44373-44381
Author(s):  
Xiaozhe Wang ◽  
Qi Wang ◽  
Zhijun Chai ◽  
Wenzhi Wu
Keyword(s):  
First Principles ◽  
First Principle ◽  
First Principles Calculations ◽  
Temperature Dependent ◽  
Time Resolved ◽  
First Principle Calculations ◽  
Steady State Time ◽  
Time Resolved Photoluminescence ◽  
Thermal Stability Of ◽  
Temperature Dependent Photoluminescence

The thermal properties of FAPbBr3 perovskite nanocrystals (PNCs) is investigated by use of temperature-dependent steady-state/time-resolved photoluminescence and first-principle calculations.

Temperature Dependent Photoluminescence of ZnSe/Alq3 Hybrid Heterostructure

2008 ◽  
Vol 55-57 ◽  
pp. 493-496
Author(s):  
Wisanu Pecharapa ◽  
P. Potirak ◽  
W. Yindeesuk
Keyword(s):  
Electron Beam ◽  
Quantum Efficiency ◽  
Exciton State ◽  
Temperature Dependent ◽  
Pl Spectra ◽  
20 Nm ◽  
Temperature Dependent Photoluminescence

II-VI inorganic/organic heterostructures consisting of ZnSe and tris(8-hydroxyquinoline) aluminum (Alq3) were prepared by electron beam evaporator. Alq3 layer with 20 nm was grown between 200-nm ZnSe layers. Photoluminescence measurement was conducted at various temperatures in order to investigate the important temperature-dependent parameters of this structure. PL spectra revealed thermal population of exciton state and the change in PL quantum efficiency of the film.

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