scholarly journals Focused-Ion-Beam-Deposited Pt Contacts on ZnO Nanowires

2019 ◽  
Vol 16 (33) ◽  
pp. 13-20 ◽  
Author(s):  
Jr-Hau He ◽  
Pei H. Chang ◽  
Cheng-Ying Chen ◽  
Kun-Tonh Tsai
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Zno Nanowires

Modification of structure and optical property of ZnO nanowires by Ga ion beam

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yao Cheng ◽  
Yao Liang ◽  
Ming Lei ◽  
Siu Kong Hark ◽  
Ning Wang
Keyword(s):  
Optical Property ◽  
Low Temperatures ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Green Emission ◽  
Zno Nanowires ◽  
Crystal Quality ◽  
Spectroscopy Study ◽  
Doped Zno ◽  
Ga Doping

AbstractBased on the focused ion beam (FIB) technology, we have prepared ZnO nanowires containing periodic nano-sized structures by an ultra thin Ga ion beam. ZnO nanowires can keep a good crystal quality after Ga ion bombardment. The cathodoluminescence (CL) spectroscopy study of the Ga-doped ZnO nanowires at low temperatures shows that the Ga doping effect can largely suppress the green emission that may mainly originate from the defects on the surfaces of ZnO nanowires.

Examining the crystal growth that influences the electronic device output from vertical arrays of ZnO nanowires

2014 ◽  
Vol 1659 ◽  
pp. 101-106
Author(s):  
Alex M. Lord ◽  
Michael B. Ward ◽  
Alex S. Walton ◽  
Jonathan Evans ◽  
Nathan Smith ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Focused Ion Beam ◽  
Electronic Device ◽  
Ion Beam ◽  
Electrical Contact ◽  
Zno Nanowires ◽  
Base Layer ◽  
Vertical Arrays ◽  
Growth Method ◽  
A Minor

ABSTRACTZnO nanowire (NW) arrays were examined with Transmission Electron Microscopy (TEM) in cross-section after preparation by Focused Ion Beam (FIB) milling. This technique revealed that ZnO nanowires grown using a Au catalyzed vapor technique typically have Au particles at the NW tips, and also randomly dispersed across the base crystal growth that joins adjacent NWs. It is shown the adjacent NWs and the combined base growth is one crystal structure which can be used as a back electrical contact making fabrication of vertical array devices possible. However, the base growth displays detrimental features such as embedded Au particles and lattice defects which can affect the electrical output through depletion regions and scattering centers. In an effort to overcome these problems we investigate a growth method that is nucleated through a minor alteration of the a-plane sapphire surface roughness via a weak chemical etch. Observations of various stages of the growth show the growth nucleates as separate nanoislands that grow in c-plane alignment with Sapphire (1-210), and as growth continues these islands meet and form a polycrystalline film. Further growth initiates nanowire growth and the formation of a single crystal base layer and NW structure that can cover several square millimeter’s. This allows high quality arrays that are relatively free from defects to be formed without any metals contamination and ready for further device processing.

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films

2002 ◽  
Vol 719 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
Kyu Hwan Oh
Keyword(s):  
Cross Sections ◽  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Carbon Films ◽  
Diamond Like Carbon ◽  
Glass Substrates ◽  
Atomic Force ◽  
Initiation And Propagation

AbstractThe role of imperfections on the initiation and propagation of interface delaminations in compressed thin films has been analyzed using experiments with diamond-like carbon (DLC) films deposited onto glass substrates. The surface topologies and interface separations have been characterized by using the Atomic Force Microscope (AFM) and the Focused Ion Beam (FIB) imaging system. The lengths and amplitudes of numerous imperfections have been measured by AFM and the interface separations characterized on cross sections made with the FIB. Chemical analysis of several sites, performed using Auger Electron Spectroscopy (AES), has revealed the origin of the imperfections. The incidence of buckles has been correlated with the imperfection length.

Low Energy Ar Ion Milling of FIB TEM Specimens from 14 nm and Future FinFET Technologies

2018 ◽  
Author(s):  
C.S. Bonifacio ◽  
P. Nowakowski ◽  
M.J. Campin ◽  
M.L. Ray ◽  
P.E. Fischione
Keyword(s):  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Ion Milling ◽  
Transmission Electron ◽  
High Resolution Tem ◽  
Effect Transistor ◽  
20 Nm ◽  
Argon Ion

Abstract Transmission electron microscopy (TEM) specimens are typically prepared using the focused ion beam (FIB) due to its site specificity, and fast and accurate thinning capabilities. However, TEM and high-resolution TEM (HRTEM) analysis may be limited due to the resulting FIB-induced artifacts. This work identifies FIB artifacts and presents the use of argon ion milling for the removal of FIB-induced damage for reproducible TEM specimen preparation of current and future fin field effect transistor (FinFET) technologies. Subsequently, high-quality and electron-transparent TEM specimens of less than 20 nm are obtained.

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