Cyclo-Olefin polymer direct bonding using low temperature plasma activation bonding

Author(s):  
J. Mizuno ◽  
H. Ishida ◽  
S. Farrens ◽  
V. Dragoi ◽  
H. Shinohara ◽  
...  
2009 ◽  
Vol 156 (5) ◽  
pp. H307 ◽  
Author(s):  
Xiaobo Ma ◽  
Chao Chen ◽  
Weili Liu ◽  
Xuyan Liu ◽  
Xiaofeng Du ◽  
...  

2005 ◽  
Vol 872 ◽  
Author(s):  
Viorel Dragoi ◽  
Sharon Farrens

AbstractThis paper introduces a new technology: low temperature plasma activated wafer bonding. In this process, the wafers are submitted to a plasma treatment prior to bringing them into contact for bonding. The surface activation allows process temperatures ranging from room temperature to maximum 400°C. For Si direct bonding using plasma activation the Si bulk fracture strength is reached after a thermal annealing of 1 hour at 300°C, much lower than the annealing temperature used for the standard process without plasma activation (∼1100°C). Experimental results illustrating the main benefits of the process are presented. The process was successfully applied also for bonding other materials than silicon.


2019 ◽  
Vol 23 (3) ◽  
pp. 746-754
Author(s):  
Dinar Dilshatovich Fazullin ◽  
Gennady Vitalievich Mavrin ◽  
Vladislav Olegovich Dryakhlov ◽  
Ildar Gilmanovich Shaikhiev ◽  
Irek Rashatovich Nizameyev

Sign in / Sign up

Export Citation Format

Share Document