ZnSe Nanowire Photodetector Prepared on Oxidized Silicon Substrate by Molecular-Beam Epitaxy

2009 ◽  
Vol 156 (4) ◽  
pp. J73 ◽  
Author(s):  
C. H. Hsiao ◽  
S. J. Chang ◽  
S. B. Wang ◽  
S. P. Chang ◽  
T. C. Li ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam

InGaN nanopillars grown on silicon substrate using plasma assisted molecular beam epitaxy

2009 ◽  
Vol 20 (32) ◽  
pp. 325605 ◽  
Author(s):  
A P Vajpeyi ◽  
A O Ajagunna ◽  
K Tsagaraki ◽  
M Androulidaki ◽  
A Georgakilas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam

Molecular-beam epitaxy of GaAs/Si(001) structures for high-performance tandem A III B V/Si-solar energy converters on an active silicon substrate

2011 ◽  
Vol 53 (9) ◽  
pp. 906-913 ◽  
Author(s):  
M. A. Putyato ◽  
B. R. Semyagin ◽  
E. A. Emel’yanov ◽  
N. A. Pakhanov ◽  
V. V. Preobrazhenskii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Solar Energy ◽  
Silicon Substrate ◽  
High Performance ◽  
Molecular Beam ◽  
Energy Converters

Advances in the Realisation of GaN-Based Microcavities: Towards Strong Coupling at Room Temperature

2003 ◽  
Vol 798 ◽  
Author(s):  
F. Semond ◽  
D. Byrne ◽  
F. Natali ◽  
M. Leroux ◽  
J. Massies ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Strong Coupling ◽  
Silicon Substrate ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Cavity ◽  
Strong Coupling Regime ◽  
Rabi Splitting ◽  
Dielectric Mirror ◽  
High Finesse

ABSTRACTIn a recent paper [Phys. Rev. B 68, 153313 (2003)], we reported the first experimental observation of the strong coupling regime in a GaN-based microcavity. The λ/2 GaN optical cavity was grown by molecular beam epitaxy on a Si(111) substrate. The upper mirror is a SiO2/Si3N4 dielectric mirror and the silicon substrate acts as the bottom mirror. With such a relatively simple and low-finesse microcavity, a Rabi splitting of 31 meV was measured at 5K. On the basis of this very encouraging result, approaches to fabricate high-finesse GaN-based cavities exhibiting strong coupling with stable polaritons at room temperature are discussed.

Synthesis by Molecular Beam Epitaxy and Properties of InGaN Nanostructures of Branched Morphology on a Silicon Substrate

2019 ◽  
Vol 45 (11) ◽  
pp. 1111-1113 ◽  
Author(s):  
R. R. Reznik ◽  
K. P. Kotlyar ◽  
N. V. Kryzhanovskaya ◽  
S. V. Morozov ◽  
G. E. Cirlin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam

scholarly journals Влияние центра EL2 на фотоотклик ансамбля радиальных нитевидных нанокристаллов GaAs/AlGaAs

2019 ◽  
Vol 45 (16) ◽  
pp. 37
Author(s):  
Н.Р. Григорьева ◽  
И.В. Штром ◽  
Р.В. Григорьев ◽  
И.П. Сошников ◽  
Р.Р. Резник ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Normal State ◽  
Silicon Substrate ◽  
Recovery Time ◽  
Molecular Beam ◽  
Bulk Crystal ◽  
Type Silicon ◽  
P Type

The role of EL2 defect in a formation of a photoresponse of an array of radial GaAs/AlGaAs nanowires (x=0.3) n-type grown by molecular beam epitaxy on a p-type silicon substrate was studied. A significant reduction in the recovery time of the photoresponse of nanowires was found in comparison with the bulk crystal during the transition of the EL2-center from the non-photoactive to the normal state.

Low‐loss GaAs/AlGaAs optical waveguides and phase modulator on silicon substrate grown by molecular beam epitaxy

1990 ◽  
Vol 56 (9) ◽  
pp. 802-804 ◽  
Author(s):  
Y. S. Kim ◽  
S. S. Lee ◽  
R. V. Ramaswamy ◽  
S. Sakai ◽  
Y. C. Kao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Molecular Beam ◽  
Phase Modulator ◽  
Low Loss

scholarly journals Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)

2019 ◽  
Vol 12 ◽  
pp. 1177-1181 ◽  
Author(s):  
Ho Xin Jing ◽  
Che Azurahanim Che Abdullah ◽  
Mohd Zaki Mohd Yusoff ◽  
Azzafeerah Mahyuddin ◽  
Zainuriah Hassan
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Silicon Substrate ◽  
Molecular Beam ◽  
Structural And Optical Properties

Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

2012 ◽  
Vol 347 (1) ◽  
pp. 49-52 ◽  
Author(s):  
J. Penuelas ◽  
X. Lu ◽  
N.P. Blanchard ◽  
G. Saint-Girons ◽  
B. Vilquin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Silicon Substrate ◽  
Molecular Beam

scholarly journals RADIATION-INDUCED GROWTH EPITAXIAL CASI2 FILM

2020 ◽  
Author(s):  
Aleksey Kacyuba ◽  
Anatoly Dvurechenskii ◽  
Gennady Kamaev ◽  
Vladimir Volodin ◽  
Viktor Kirienko
Keyword(s):  
Crystal Structure ◽  
Electron Beam ◽  
Light Scattering ◽  
Molecular Beam Epitaxy ◽  
Electron Irradiation ◽  
Silicon Substrate ◽  
Molecular Beam ◽  
Raman Light Scattering ◽  
Radiation Induced

In this work investigated crystal structure of films formed by molecular beam epitaxy (MBE) of CaSi2 on Si (111), under electron irradiation by the method of Raman light scattering (RS), it was found that a CaSi2 film is formed at the interface between the silicon substrate and the epitaxially growing CaF2 film under the influence of an electron beam.

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