Characterization of Fe3Si/Si Schottky Contact for Future Spin-Transistor

2019 ◽  
Vol 16 (10) ◽  
pp. 277-280
Author(s):  
Yuji Kishi ◽  
Mamoru Kumano ◽  
Koji Ueda ◽  
Taizoh Sadoh ◽  
Masanobu Miyao
Keyword(s):  
Schottky Contact ◽  
Spin Transistor

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

Simulation and electrical characterization of Pd as Schottky contact on hydrothermally grown ZnO

2012 ◽  
Vol T148 ◽  
pp. 014007
Author(s):  
C K Tang ◽  
L Vines ◽  
B G Svensson ◽  
E V Monakhov
Keyword(s):  
Schottky Contact ◽  
Electrical Characterization

In-situ electrical characterization of Si during nanoindentation

2002 ◽  
Vol 750 ◽  
Author(s):  
J. E. Bradby ◽  
J. S. Williams ◽  
M. V. Swain
Keyword(s):  
Schottky Contact ◽  
Electrical Characterization ◽  
Electrical Current ◽  
Metallic Phase ◽  
High Resistivity ◽  
Previous Suggestion ◽  
Amorphous Si ◽  
Insight Into

ABSTRACTA novel in-situ electrical characterization technique is used to study the deformation behavior of silicon during nanoindentation. The method involved the formation of a Schottky contact on high resistivity epitaxial Si that is converted to an ohmic contact when Si transforms from the familiar semiconducting Si-I to a metallic Si-II phase. This behavior leads to substantial changes in the current measured across the sample. The Si conductivity used (epitaxial 5 Ωcm on 6 × 10-3 Ωcm) provides particular sensitivity to the onset of a phase transformation directly under the indenter. On unloading, a reverse transformation from ohmic to Schottky contact was observed. This configuration was used to correlate the observed changes in the electronic properties with features in nanoindentation load-unload curves. The onset of the transformation to the metallic phase was observed to occur during loading using both spherical and Berkovich indenters. Interestingly, the onset of the transformation was detected before the observed discontinuity on loading (the so-called ‘pop-in’ event). This observation is consistent with our previous suggestion that the pop-in event is a result of the onset of flow of the ductile metallic phase beyond the constraint of the indenter. These changes were consistently observed after repeated indentation on the same position in the sample, indicating that small volumes of Si-III and Si-XII crystalline phases as well as amorphous Si (a-Si), which form on unloading, can transform back to the metallic Si-II phase on reloading. A strong decrease in the measured electrical current across the sample occurred as soon as the unloading cycle commenced and prior to the observation of the pop-out event. Overall, these in-situ measurements have provided much insight into pressure-induced transformation in Si under nanoindentation.

Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals

1997 ◽  
Vol 41 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Ching-Ting Lee ◽  
Hung-Pin Shiao ◽  
Nien-Tze Yeh ◽  
Chang-Da Tsai ◽  
Yen-Tang Lyu ◽  
...  
Keyword(s):  
Schottky Contact ◽  
Thermal Reliability

scholarly journals Single-molecule devices with graphene electrodes

2016 ◽  
Vol 45 (42) ◽  
pp. 16570-16574 ◽  
Author(s):  
S. Lumetti ◽  
A. Candini ◽  
C. Godfrin ◽  
F. Balestro ◽  
W. Wernsdorfer ◽  
...  
Keyword(s):  
Low Temperature ◽  
Single Molecule ◽  
Molecular Spin ◽  
Spin Transistor

Design, fabrication and low temperature characterization of a molecular spin transistor made of graphene electrodes and a TbPc2 molecular dot are reported.

Performance characterization of InGaP Schottky contact with ITO transparent electrodes

1998 ◽  
Vol 27 (9) ◽  
pp. 1017-1021 ◽  
Author(s):  
Ching-Ting Lee ◽  
Ching-Hung Fu ◽  
Chang-Da Tsai ◽  
Wei Lin
Keyword(s):  
Schottky Contact ◽  
Transparent Electrodes ◽  
Performance Characterization

Characterization of nGaAs-Au Schottky Diodes as Grating Coupled Photodetectors

1992 ◽  
Vol 281 ◽  
Author(s):  
Kannan Krishnaswami ◽  
A. S. Karakashian ◽  
C. Wong
Keyword(s):  
Incident Angle ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Depletion Region ◽  
Photon Absorption ◽  
Surface Plasma ◽  
Surface Plasma Resonance ◽  
Specific Incident ◽  
Wet Chemical

ABSTRACTUsing holography and wet chemical etching, a grating of period 450nm and depth of 15nm was fabricated on a n-type GaAs substrate having a doping of 1016 cm−3. A 30 nm layer of Au was deposited on the substrate forming a Schottky contact. The ohmic back contact is an alloy of Ni, Au and Ge. These devices were optically and electrically characterized.Optical characterization was done using a polarized 632.8 nm HeNe laser. Reflectivity measurements for complete angular scans with output currents were determined. It was observed that as reflectivity dropped to a minimum, at a specific incident angle, the output current peaked. This was attributed to excitation of surface plasma oscillations in the grating, allowing greater photon absorption in the depletion region. This was observed only when the incident electric field was p-polarized and normal to the orientation of the grating, thus satisfying the surface plasma resonance conditions.Under the above conditions, it was observed that in a grating coupled photodetector a higher quantum efficiency can be achieved.

Characterization of Ag/Ti Schottky contact on ZnO thin film under UV exposure

2020 ◽  
Author(s):  
Vikram Teja ◽  
Argha Sarkar ◽  
Mayuri Kundu ◽  
M. Sreenath
Keyword(s):  
Thin Film ◽  
Schottky Contact ◽  
Uv Exposure ◽  
Zno Thin Film
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