Influence of in-situ Boron Doping on the Surface Roughening of SiGe:B Films

2019 ◽  
Vol 16 (10) ◽  
pp. 267-272 ◽  
Author(s):  
Ryutaro Tsuchida ◽  
Shinji Mori ◽  
Tsutomu Sato ◽  
Naotaka Uchitomi ◽  
Ichiro Mizushima
1995 ◽  
Vol 386 ◽  
Author(s):  
J. E. Parmeter ◽  
R. J. Shul ◽  
P. A. Miller

ABSTRACTWe have used in situ Auger spectroscopic analysis to investigate the composition of InP surfaces cleaned in rf H2 plasmas and etched in rf H2/CH4/Ar plasmas. In general agreement with previous results, hydrogen plasma treatment is found to remove surface carbon and oxygen impurities but also leads to substantial surface phosphorus depletion if not carefully controlled. Low plasma exposure times and rf power settings minimize both phosphorus depletion and surface roughening. Surfaces etched in H2/CH4/Ar plasmas can show severe phosphorus depletion in high density plasmas leading to etch rates of ∼ 700 Å/min, but this effect is greatly reduced in lower density plasmas that produce etch rates of 30–400 Å/min.


2019 ◽  
Vol 44 (33) ◽  
pp. 18193-18204 ◽  
Author(s):  
Shrilekha V. Sawant ◽  
Seemita Banerjee ◽  
Ashwin W. Patwardhan ◽  
Jyeshtharaj B. Joshi ◽  
Kinshuk Dasgupta

2015 ◽  
Vol 821-823 ◽  
pp. 953-956
Author(s):  
Gemma Rius ◽  
Narcis Mestres ◽  
Osamu Eryu ◽  
Philippe Godignon

Graphene is a 2D material with potential for almost any purpose, thanks to a combination of excellent characteristics, e.g. high electrical conductivity. Graphene grown on SiC wafers is one of the promising routes for graphene integration into planar technology electronic applications. Synthesis is based on the decomposition of a SiC single crystal surface at high temperature, where Si-terminated SiC substrates require the formation of the C buffer layer. In spite of numerous experimental and theoretical works the understanding and control upon crucial factors such as step and terrace stability or surface roughening is far from been fully comprehended and then technologically optimized. We present experimental results on the deposition of graphene onto Si-terminated 6H-SiC. We analyze the effect of ex situ and in situ conditionings of the SiC surface in the thermal decomposition and reconstruction of the SiC terraces, toward higher control upon the growth process of graphene films.


2018 ◽  
Vol 82 ◽  
pp. 9-13 ◽  
Author(s):  
Shashidhar Shintri ◽  
Chloe Yong ◽  
Baofu Zhu ◽  
Shayan Byrappa ◽  
Bianzhu Fu ◽  
...  

1992 ◽  
Vol 70 (10-11) ◽  
pp. 830-833
Author(s):  
H. Bouchard ◽  
A. Azelmad ◽  
J. F. Currie ◽  
M. Meunier

Using an in situ technique, stress was measured as a function of annealing temperature to investigate the effect of phosphorous and boron doping of silicon dioxide glass films deposited by low-pressure chemical vapor deposition (LPCVD). It was found that the initial stress of phosphosilicate glass is independent of the amount of phosphorus present, while the boron content influences the initial stress in borophosphosilicate glass. The stress increases to a maximum, σm, corresponding to a temperature Tm, above which the onset of viscous flow reduces the stress to zero at a temperature T0. All these parameters are dependant on dopant concentrations. The observed mechanical behavior is discussed in terms of film viscosity.


Author(s):  
A. V. Zagrebelny ◽  
E. T. Lilleodden ◽  
J. C. Nelson ◽  
S. Ramamurthy ◽  
C. B. Carter

Contact which only involves a small volume of material is becoming increasingly important to many industries including micromachines, microelectronics, and magnetic recording. The ability to characterize surface roughening on the micro- and nanoscopic scale is invaluable in understanding microplasticity due to indentation, scratches, wear, fatigue and epitactic mismatch. It has been demonstrated that AFM studies are appropriate for developing a mechanistic approach to μN load indentation analysis since they allow deformation volumes and residual depths to be measured and characterized directly and unambiguously.In the present study, interfaces between silicate glass and single-crystal α-Al2O3 have been studied using AFM and nanoindentation. The interfaces between the glass and the crystalline grains were prepared by growing films of anorthite (CaAl2Si2O8) composition with thickness ranging 100-200 nm on single-crystal sapphire substrates of {1120} (A-plane) and {1102} (R-plane) crystallographic orientations by pulsed-laser deposition (PLD). Some specimens were subjected to heat treatments in a conventional box furnace causing films to dewet the substrates. Fig. 1 shows schematically the morphology of the dewetted film which has resulted in the formation of distinctive islands, 0.5-2 μm in size. Both types of specimens were tested with two different micro/nanomechanical testers.


2007 ◽  
Vol 16 (4-7) ◽  
pp. 767-770 ◽  
Author(s):  
Norio Tokuda ◽  
Hitoshi Umezawa ◽  
Takeyasu Saito ◽  
Kikuo Yamabe ◽  
Hideyo Okushi ◽  
...  

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