Exploiting the Benefits of Negative Polarization in n-InGaN/p-GaN Single Heterostructure Light Emitting Diode with p-side Down
2012 ◽
Vol 132
(2)
◽
pp. 77-80
Keyword(s):
Keyword(s):
2019 ◽
Vol 1
(1)
◽
pp. 1-14