AbstractThe implementation of porous low-k and ultra-low k dielectrics to reduce RC delay in integrated circuit interconnect wiring has been fraught with numerous challenges. The obvious challenges of materials design and preservation of the desired electrical and mechanical properties upon subsequent processing have been significant. The vulnerability of these films to damage from fast ion and radiation damage will be discussed in the context of post-deposition processing (including low-k cure and plasma processing damage). This paper attempts to review the challenges associated with destructive and non-destructive measurement of low k dielectric films with respect to underlying physical principles of the metrology. Metrology techniques, assumed to be non-destructive based on experience with dense silicon dioxide, will be discussed with regards to newer and more fragile low-k dielectric films.