The Characteristics of New n-Type Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

2008 ◽  
Vol 29 (2) ◽  
pp. 174-176 ◽  
Author(s):  
Won-Kyu Lee ◽  
Joong-Hyun Park ◽  
Joonhoo Choi ◽  
Min-Koo Han
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Alternating Magnetic Field ◽  
Silicon Thin Film

The Effect of Electrical Stress on the New Top Gate N-type Depletion Mode Polycrystalline Thin Film Transistors Fabricated by Alternating Magnetic Field Enhanced Rapid Thermal Annealing

2008 ◽  
Vol 1066 ◽  
Author(s):  
Won-Kyu Lee ◽  
Sang-Myeon Han ◽  
Sang-Geun Park ◽  
Sung-Hwan Choi ◽  
Joonhoo Choi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
State Density ◽  
Alternating Magnetic Field ◽  
Threshold Voltage Shift ◽  
Electrical Stress

ABSTRACTWe have fabricated the new top gate depletion mode n-type alternating magnetic field enhanced rapid thermal annealing (AMFERTA) polycrystalline silicon (poly-Si) thin film transistors (TFTs), which show the excellent electrical characteristics and superior stability compared with hydrogenated amorphous silicon (a-Si:H) TFTs and excimer laser crystallized (ELC) low temperature polycrystalline silicon (LTPS) TFTs. The fabricated AMFERTA poly-Si TFTs were not degraded under hot-carrier stress, and highly biased vertical field stress. The considerably large threshold voltage shift (ΔVTH) and trap state density reducing were occurred when the gate bias and drain bias were both large enough. The dominant mechanism of instability in the fabricated depletion mode AMFERTA poly-Si TFTs may be due to carrier induced donor-like defects reduction within the channel layer, especially near the drain junction.

Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Polycrystalline Silicon Thin Film Formed By Multiple Pulsed Rapid Thermal Annealing – Intrinsic a-Si Film Thickness Effect

2012 ◽  
Vol 1426 ◽  
pp. 269-274 ◽  
Author(s):  
Yue Kuo ◽  
Chi-Chou Lin
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Polycrystalline Silicon ◽  
Volume Fraction ◽  
Film Deposition ◽  
Thickness Effect ◽  
Silicon Thin Film

ABSTRACTThe polycrystalline n+/intrinsic silicon thin film stacks with various original intrinsic amorphous silicon layer thicknesses were formed using the multiple pulsed rapid thermal annealing process with the Ni-induced crystallization mechanism. The thick polycrystalline silicon stack was prepared by repeated steps of 1) amorphous silicon thin film deposition, 2) solution oxidation, 3) dehydrogenation, 4) pulsed rapid thermal annealing, and 5) oxide stripping. The poly-Si film properties, such as the grain size, orientation, and volume fraction of the crystalline phase, were related to the original intrinsic silicon film thickness and the total thermal budget. This process is effective in preparing the high volume fraction polycrystalline silicon thin film, which is important for low-cost thin-film solar cells, electronic and optoelectronic devices.

Threshold voltage of excimer-laser-annealed polycrystalline silicon thin-film transistors

2000 ◽  
Vol 76 (17) ◽  
pp. 2442-2444 ◽  
Author(s):  
C. T. Angelis ◽  
C. A. Dimitriadis ◽  
F. V. Farmakis ◽  
J. Brini ◽  
G. Kamarinos ◽  
...  
Keyword(s):  
Thin Film ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film
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