Vacancy-Phosphorous Defect Complex in as-grown, Ultra Pure, Float Zone Single Crystal Silicon

2019 ◽  
Vol 16 (6) ◽  
pp. 109-120
Author(s):  
Petr Viscor ◽  
Ole Andersen ◽  
Thomas Clausen ◽  
Paul A. Ellsmore ◽  
Leif Jensen
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Defect Complex ◽  
Crystal Silicon ◽  
Float Zone

EIS Characterization of Ultra High Purity, Float Zone Single Crystal Silicon

2019 ◽  
Vol 16 (6) ◽  
pp. 331-342 ◽  
Author(s):  
Petr Viscor ◽  
Ole Andersen ◽  
Thomas Clausen ◽  
Paul A. Ellsmore ◽  
Leif Jensen ◽  
...  
Keyword(s):  
Single Crystal ◽  
High Purity ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Float Zone ◽  
Ultra High Purity

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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