Room Temperature Deposited Enhancement Mode and Depletion Mode Indium Zinc Oxide Thin Film Transistors

2019 ◽  
Vol 13 (3) ◽  
pp. 159-164
Author(s):  
Yu-Lin Wang ◽  
Wantae Lim ◽  
Lance Covert ◽  
Travis Anderson ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Enhancement Mode ◽  
Indium Zinc Oxide

scholarly journals Alloy-Electrode-Assisted High-Performance Enhancement-Type Neodymium-Doped Indium-Zinc-Oxide Thin-Film Transistors on Polyimide Flexible Substrate

Research ◽  
2021 ◽  
Vol 2021 ◽  
pp. 1-9 ◽  
Author(s):  
Kuankuan Lu ◽  
Rihui Yao ◽  
Wei Xu ◽  
Honglong Ning ◽  
Xu Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Performance ◽  
Flexible Substrate ◽  
Pure Copper ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Enhancement Mode ◽  
Indium Zinc Oxide

Flexible thin-film transistors with high current-driven capability are of great significance for the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy source/drain (S/D) electrode on flexible amorphous neodymium-doped indium-zinc-oxide thin-film transistors (NdIZO-TFTs) was investigated. Compared with pure copper (Cu) and aluminum (Al) S/D electrodes, the CCZ S/D electrode changes the TFT working mode from depletion mode to enhancement mode, which is ascribed to the alloy-assisted interface layer besides work function matching. X-ray photoelectron spectroscopy (XPS) depth profile analysis was conducted to examine the chemical states of the contact interface, and the result suggested that chromium (Cr) oxide and zirconium (Zr) oxide aggregate at the interface between the S/D electrode and the active layer, acting as a potential barrier against residual free electron carriers. The optimal NdIZO-TFT exhibited a desired performance with a saturation mobility (μsat) of 40.3 cm2·V-1·s-1, an Ion/Ioff ratio of 1.24×108, a subthreshold swing (SS) value of 0.12 V·decade-1, and a threshold voltage (Vth) of 0.83 V. This work is anticipated to provide a novel approach to the realization of high-performance flexible NdIZO-TFTs working in enhancement mode.

Room temperature deposited indium zinc oxide thin film transistors

2007 ◽  
Vol 90 (23) ◽  
pp. 232103 ◽  
Author(s):  
Yu-Lin Wang ◽  
F. Ren ◽  
Wantae Lim ◽  
D. P. Norton ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Transparent amorphous indium zinc oxide thin-film transistors fabricated at room temperature

2007 ◽  
Vol 90 (2) ◽  
pp. 022106 ◽  
Author(s):  
Ju-Il Song ◽  
Jae-Soung Park ◽  
Howoon Kim ◽  
Young-Woo Heo ◽  
Joon-Hyung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Annealing effects on the performances of Bismuth-doped Indium Zinc Oxide thin-film transistors

2019 ◽  
Vol 30 (14) ◽  
pp. 12929-12936
Author(s):  
Dong Lin ◽  
Xudong Zheng ◽  
Jianwen Yang ◽  
Kaiwen Li ◽  
Jingjing Shao ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide ◽  
Annealing Effects
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