An Evaluation of Ti-Based Metal Gate Electrodes on Hf-Silicate Dielectrics for Dual-Metal-Gate Applications

2008 ◽  
Vol 11 (4) ◽  
pp. H81 ◽  
Author(s):  
S. Y. Son ◽  
P. Kumar ◽  
J. S. Lee ◽  
H. Cho ◽  
H. S. Jung ◽  
...  
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal

Work function and thermal stability of Ti1−xAlxNy for dual metal gate electrodes

2002 ◽  
Vol 81 (22) ◽  
pp. 4192-4194 ◽  
Author(s):  
Tae-Ho Cha ◽  
Dae-Gyu Park ◽  
Tae-Kyun Kim ◽  
Se-Aug Jang ◽  
In-Seok Yeo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Dual Metal ◽  
Thermal Stability Of

Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS

2004 ◽  
Author(s):  
JaeHoon Lee ◽  
You-Seok Suh ◽  
H. Lazar ◽  
R. Jha ◽  
J. Gurganus ◽  
...  
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
High K ◽  
Dual Metal

scholarly journals Stability of Ru- and Ta-based metal gate electrodes in contact with dielectrics for Si-CMOS

2004 ◽  
Vol 241 (10) ◽  
pp. 2253-2267 ◽  
Author(s):  
Zhiqiang Chen ◽  
Veena Misra ◽  
Ryan P. Haggerty ◽  
Susanne Stemmer
Keyword(s):  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

Influence of Metal Gate Electrodes on Electrical Properties of Atomic-Layer-Deposited Al-Rich HfAlO/Ga2O3 MOSCAPs

2020 ◽  
Vol 67 (4) ◽  
pp. 1730-1736
Author(s):  
Hongpeng Zhang ◽  
Lei Yuan ◽  
Xiaoyan Tang ◽  
Jichao Hu ◽  
Jianwu Sun ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes

On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

2007 ◽  
Vol 102 (7) ◽  
pp. 074511 ◽  
Author(s):  
J. K. Schaeffer ◽  
D. C. Gilmer ◽  
S. Samavedam ◽  
M. Raymond ◽  
A. Haggag ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Dielectrics ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
High Permittivity ◽  
Gate Electrodes

Thermal stability of Hf/sub x/Ta/sub y/N metal gate electrodes for advanced MOS devices

2006 ◽  
Vol 27 (3) ◽  
pp. 148-150 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Kuei-Shu Chang-Liao ◽  
Tzu-Chen Wang ◽  
Tien-Ko Wang ◽  
Howard Chih-Hao Wang
Keyword(s):  
Thermal Stability ◽  
Metal Gate Electrodes ◽  
Metal Gate ◽  
Gate Electrodes ◽  
Mos Devices ◽  
Thermal Stability Of
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