Fabrication of Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing

2019 ◽  
Vol 4 (1) ◽  
pp. 427-432
Author(s):  
R. L. Ohta ◽  
C. E. Viana ◽  
N. Morimoto ◽  
B. V. Borges
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Semiconductor Metal ◽  
Temperature Rapid Thermal Annealing

scholarly journals Fabrication of highly L10-ordered FePt thin films by low-temperature rapid thermal annealing

APL Materials ◽  
2013 ◽  
Vol 1 (3) ◽  
pp. 032117 ◽  
Author(s):  
M. Mizuguchi ◽  
T. Sakurada ◽  
T. Y. Tashiro ◽  
K. Sato ◽  
T. J. Konno ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Fept Thin Films

Crystallized Si films by low‐temperature rapid thermal annealing of amorphous silicon

1989 ◽  
Vol 65 (5) ◽  
pp. 2069-2072 ◽  
Author(s):  
R. Kakkad ◽  
J. Smith ◽  
W. S. Lau ◽  
S. J. Fonash ◽  
R. Kerns
Keyword(s):  
Low Temperature ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Si Films

scholarly journals Fabrication of Ti-Si-Ti Metal-Semiconductor-Metal Photodetectors Using Low Temperature Rapid Thermal Annealing

2007 ◽  
Vol 2 (2) ◽  
pp. 85-88
Author(s):  
Ricardo L. Ohta ◽  
Carlos E. Viana ◽  
Nilton I. Morimoto ◽  
Ben-Hur V. Borges
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Dark Current ◽  
Low Temperatures ◽  
Interfacial Layer ◽  
Annealing Temperature ◽  
Metal Semiconductor Metal ◽  
Order Of Magnitude ◽  
Msm Photodetector ◽  
Temperature Rapid Thermal Annealing

The electrical properties of Ti-Si-Ti Metal-Semiconductor-Metal (MSM) photodetector were studied as a function of annealing temperature, using Rapid Thermal Annealing (RTA) process. Low temperatures were used at the RTA (200-350°C) in order to avoid the formation of silicides.We observed a decrease in the dark current on samples annealed between 200 and 300°C. The lowest dark current was obtained in the sample annealed at 250°C (4.8 nA), which is one order of magnitude lower than as-deposited sample (53.5 nA). The sample annealed at 350°C had an increase in dark current (82.9 nA). This behavior of the dark current can be explained by the increase in the barrier height at 200-300°C annealing temperature range, due to increase of the thickness of the amorphous interdiffused Ti-Si interfacial layer, and decrease in the barrier value at sample annealed at 350°C, due to pre formation of C49 TiSi2.

Control of titanium‐silicon and silicon dioxide reactions by low‐temperature rapid thermal annealing

1985 ◽  
Vol 47 (10) ◽  
pp. 1080-1082 ◽  
Author(s):  
L. J. Brillson ◽  
M. L. Slade ◽  
H. W. Richter ◽  
H. Vander Plas ◽  
R. T. Fulks
Keyword(s):  
Low Temperature ◽  
Silicon Dioxide ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Temperature Rapid Thermal Annealing ◽  
Titanium Silicon
Sign in / Sign up

Export Citation Format

Share Document