ABSTRACTInGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off process. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.
2000 PPI silicon-based AlGaInP red micro-LED arrays fabricated via wafer bonding and epilayer lift-off