Achievement of Higher-k and High-Φ in Phase Controlled HfO2 Film Using Post Gate Electrode Deposition Annealing

2019 ◽  
Vol 11 (4) ◽  
pp. 35-45 ◽  
Author(s):  
Yukimune Watanabe ◽  
Hiroyuki Ota ◽  
Shinji Migita ◽  
Yuuichi Kamimuta ◽  
Kunihiko Iwamoto ◽  
...  
Keyword(s):  
Gate Electrode ◽  
Hfo2 Film

High Quality HfO2 Film and Its Applications in Novel Poly-Si Devices

2002 ◽  
Vol 716 ◽  
Author(s):  
K.L. Ng ◽  
N. Zhan ◽  
M.C. Poon ◽  
C.W. Kok ◽  
M. Chan ◽  
...  
Keyword(s):  
Barrier Height ◽  
Nonvolatile Memory ◽  
Dielectric Material ◽  
Tunneling Current ◽  
Interface Layer ◽  
Si Substrate ◽  
Hfo2 Film ◽  
Effective Barrier Height ◽  
Effective Barrier ◽  
Nonvolatile Memory Devices

AbstractHfO2 as a dielectric material in MOS capacitor by direct sputtering of Hf in an O2 ambient onto a Si substrate was studied. The results showed that the interface layer formed between HfO2 and the Si substrate was affected by the RTA time in the 500°C annealing temperature. Since the interface layer is mainly composed of hafnium silicate, and has high interface trap density, the effective barrier height is therefore lowered with increased RTA time. The change in the effective barrier height will affect the FN tunneling current and the operation of the MOS devices when it is applied for nonvolatile memory devices.

Scalability of MOCVD-deposited Hafnium Oxide

2003 ◽  
Vol 765 ◽  
Author(s):  
S. Van Elshocht ◽  
R. Carter ◽  
M. Caymax ◽  
M. Claes ◽  
T. Conard ◽  
...  
Keyword(s):  
Hafnium Oxide ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Deposition Process ◽  
Oxide Thickness ◽  
Process Conditions ◽  
Primary Concern ◽  
Gate Electrode ◽  
K Value ◽  
High K

AbstractBecause of aggressive downscaling to increase transistor performance, the physical thickness of the SiO2 gate dielectric is rapidly approaching the limit where it will only consist of a few atomic layers. As a consequence, this will result in very high leakage currents due to direct tunneling. To allow further scaling, materials with a k-value higher than SiO2 (“high-k materials”) are explored, such that the thickness of the dielectric can be increased without degrading performance.Based on our experimental results, we discuss the potential of MOCVD-deposited HfO2 to scale to (sub)-1-nm EOTs (Equivalent Oxide Thickness). A primary concern is the interfacial layer that is formed between the Si and the HfO2, during the MOCVD deposition process, for both H-passivated and SiO2-like starting surfaces. This interfacial layer will, because of its lower k-value, significantly contribute to the EOT and reduce the benefit of the high-k material. In addition, we have experienced serious issues integrating HfO2 with a polySi gate electrode at the top interface depending on the process conditions of polySi deposition and activation anneal used. Furthermore, we have determined, based on a thickness series, the k-value for HfO2 deposited at various temperatures and found that the k-value of the HfO2 depends upon the gate electrode deposited on top (polySi or TiN).Based on our observations, the combination of MOCVD HfO2 with a polySi gate electrode will not be able to scale below the 1-nm EOT marker. The use of a metal gate however, does show promise to scale down to very low EOT values.

Field Effect Modulation of Electrocatalytic Hydrogen Evolution at Back-Gated Two-Dimensional MoS2 Electrodes

2019 ◽  
Author(s):  
Yan Wang ◽  
Sagar Udyavara ◽  
Matthew Neurock ◽  
C. Daniel Frisbie
Keyword(s):  
Electric Field ◽  
Hydrogen Evolution ◽  
Active Sites ◽  
Density Functional ◽  
Electrode Materials ◽  
Density Functional Theory Calculations ◽  
Electronic Charge ◽  
Back Side ◽  
Gate Electrode ◽  
Conventional Manner

<div> <div> <div> <p> </p><div> <div> <div> <p>Electrocatalytic activity for hydrogen evolution at monolayer MoS2 electrodes can be enhanced by the application of an electric field normal to the electrode plane. The electric field is produced by a gate electrode lying underneath the MoS2 and separated from it by a dielectric. Application of a voltage to the back-side gate electrode while sweeping the MoS2 electrochemical potential in a conventional manner in 0.5 M H2SO4 results in up to a 140-mV reduction in overpotential for hydrogen evolution at current densities of 50 mA/cm2. Tafel analysis indicates that the exchange current density is correspondingly improved by a factor of 4 to 0.1 mA/cm2 as gate voltage is increased. Density functional theory calculations support a mechanism in which the higher hydrogen evolution activity is caused by gate-induced electronic charge on Mo metal centers adjacent the S vacancies (the active sites), leading to enhanced Mo-H bond strengths. Overall, our findings indicate that the back-gated working electrode architecture is a convenient and versatile platform for investigating the connection between tunable electronic charge at active sites and overpotential for electrocatalytic processes on ultrathin electrode materials.</p></div></div></div><br><p></p></div></div></div>

Effect of Kr/O2-Plasma Reactive Sputtering on Ferroelectric Nondoped HfO₂ Formation for MFSFET With Pt Gate Electrode

2021 ◽  
Vol 68 (5) ◽  
pp. 2427-2433
Author(s):  
S. Ohmi ◽  
M. G. Kim ◽  
M. Kataoka ◽  
M. Hayashi ◽  
R. M. D. Mailig
Keyword(s):  
Reactive Sputtering ◽  
Gate Electrode ◽  
O2 Plasma

The detection of polyamines by an extended gate-type organic transistor functionalized with a carboxylate attached 1,3,4-thiadiazole derivative

2021 ◽  
Author(s):  
Koichiro Asano ◽  
Yui Sasaki ◽  
Qi Zhou ◽  
Riho Mitobe ◽  
Wei Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pattern Recognition ◽  
Thin Film Transistor ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Gate Electrode ◽  
Organic Transistor ◽  
Thiadiazole Derivative

We herein report an extended gate-type organic thin-film transistor (OTFT)-based polyamine sensor and its application for pattern recognition. The extended-gate electrode was functionalized with a complex of copper(II) ions and...

Normally off Al2O3–AlGaN/GaN MIS-HEMT With Transparent Gate Electrode for Gate Degradation Investigation

2015 ◽  
Vol 62 (3) ◽  
pp. 821-827 ◽  
Author(s):  
Yunyou Lu ◽  
Baikui Li ◽  
Xi Tang ◽  
Qimeng Jiang ◽  
Shu Yang ◽  
...  
Keyword(s):  
Gate Electrode
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