A New Approach for FEOL Critical Wafer Surface Cleaning

2019 ◽  
Vol 11 (2) ◽  
pp. 167-174
Author(s):  
Thomas Fischer ◽  
Suraj Puri ◽  
Ronald Hoyer ◽  
Kurt L. Wostyn ◽  
Tom Janssens
Keyword(s):  
Surface Cleaning ◽  
Wafer Surface ◽  
New Approach

Analysis of Impact on the Wafer Surface Performance of Supercritical CO2 Extraction

2010 ◽  
Vol 160-162 ◽  
pp. 704-708
Author(s):  
Ru Bing Han
Keyword(s):  
Photoelectron Spectroscopy ◽  
Supercritical Co2 ◽  
Organic Pollution ◽  
Extraction Process ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Good Prospect ◽  
Supercritical Co2 Extraction ◽  
Extraction Technology ◽  
Surface Performance

The surface of the wafer is easy to be polluted by the organic pollution material. The supercritical fluid extraction technology works well in extracting organic pollution material. Whether the extraction process influences the surface performance of the wafer can be determined through the SEM(scanning electron microscope), AFM (atomic force microscope), and XPS (X-ray photoelectron spectroscopy). Compare the feature and the electronic structure of the wafer before and after supercritical CO2 extraction to get how supercritical CO2 extraction process influences the wafer surface performance. The conclusion helps to determine whether the extraction technology can be applied in the wafer surface cleaning technology. Tests show that supercritical CO2 extraction process almost does not influence the surface performance of the wafer, and, the supercritical CO2 extraction technology has a good prospect in the wafer cleaning.

Si wafer surface cleaning using laser-induced shock wave: a new dry cleaning methodology

2003 ◽  
Vol 169-170 ◽  
pp. 178-180 ◽  
Author(s):  
S.H. Lee ◽  
J.G. Park ◽  
J.M. Lee ◽  
S.H. Cho ◽  
H.K. Cho
Keyword(s):  
Shock Wave ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Dry Cleaning ◽  
Si Wafer

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

1987 ◽  
Vol 102 ◽  
Author(s):  
S. V. Hattangady ◽  
R. A. Rudder ◽  
G. G. Fountain ◽  
D. J. Vitkavage ◽  
R. J. Markunas
Keyword(s):  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
High Energy ◽  
Surface Cleaning ◽  
High Energy Electron ◽  
New Approach ◽  
Wet Chemistry ◽  
Plasma Treatments

We have demonstrated low temperature (300°C) Ge epitaxy on Ge(111) and on Si(100) substrates. Critical to this epitaxy has been the use of wet chemistry to produce controlled, thin oxides on the substrates prior to loading into the reactor and an in-situ 300°C hydrogen plasma treatment to remove those oxides from the semiconductor surfaces. Reflection high energy electron diffraction shows the plasma treatments to be effective in producing clean, well-ordered surfaces. This represents a new approach for in-situ cleaning of Ge(111) and Si(100) surfaces.

scholarly journals Laser Beam Welding of AA5052, AA5083, and AA6061 Aluminum Alloys

2009 ◽  
Vol 2009 ◽  
pp. 1-9 ◽  
Author(s):  
A. El-Batahgy ◽  
M. Kutsuna
Keyword(s):  
Fusion Zone ◽  
Base Metal ◽  
Welding Speed ◽  
Filler Metal ◽  
Surface Cleaning ◽  
Solidification Cracking ◽  
Welding Parameters ◽  
Manufacturing Cost ◽  
New Approach ◽  
Aa6061 Alloy

The present investigation was mainly concerned with characteristics of autogeneous laser butt welding of 2 mm thickness nonheat treatableAA5052-H12,AA5083-H12 and 2 mm, 3 mm thickness heat treatableAA6061-T6aluminum alloys. The effect of laser welding parameters, surface cleaning, filler wire addition, and backing strip on quality of laser welded joints was clarified using 5 kW laser machine. It was found that all the investigated alloys showed tendencies for porosity and solidification cracking, particularly, at high welding speed (4 m/min). Porosity was prevented by accurate cleaning of the base metal prior to welding and optimizing the flow rate of argon shielding gas. Solidification cracking was avoided through two different approaches. The first one is based on the addition of filler metal as reported in other research works. The other new approach is concerned with autogeneous welding using a backing strip from the same base metal, and this could be applicable in production. Preventing solidification cracking in both cases was related mainly to a considerable decrease in the stress concentration at the weld metal center as a result of improving the fusion zone profile. The implementation of the new approach could help in producing weldments with a better quality due to the absence of the filler metal, which is known as a source for hydrogen-related porosity. It can also have a positive economic aspect concerning the manufacturing cost since welding is done without the addition of filler metal. Not only quality and economic positive aspects could be achieved, but also high productivity is another feature since high quality autogeneous weldments were produced with high welding speed, 6 m/min. Hardness measurements and tensile test of AA6061 alloy welds indicated a remarkable softening of the fusion zone due to dissolution of the strengthening precipitates, and this was recovered by aging treatment after welding. For alloys AA5052 and AA5083, softening of the fusion zone due to the loss of its work-hardened condition was much less in comparison with AA6061 alloy.

Influence of Surface Pre-Cleaning on Electrical Properties of Rapid Thermal Oxide and Rapid Thermal Chemical Vapor Deposition Oxide

1992 ◽  
Vol 259 ◽  
Author(s):  
Xiaoli Xu ◽  
R. T. Kuehn ◽  
J. M. Melzak ◽  
G. A. Hames ◽  
J. J. Wortman ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Thermally Grown Oxide ◽  
Surface Cleaning ◽  
Breakdown Field ◽  
Wafer Surface ◽  
Thermal Chemical Vapor Deposition ◽  
Thermal Oxide

ABSTRACTVarious surface pre-cleaning processes for rapid thermal in-situ polysilicon/oxide/silicon stacked gate formation have been evaluated. MOS capacitors have been fabricated to assess the effects of surface pre-cleaning on the quality of both Rapid Thermal Oxide (RTO) and Rapid Thermal Chemical Vapor Deposition (RTCVD) oxide. Measurement results have shown that, 1) High temperature (≥ 900 °C) rapid thermal cleaning in Ar, H2 or high vacuum (10−8 Torr) ambients can lead to MOS gates with high leakage current if RTO is used to form the gate oxide, 2) The standard Huang clean and ultra-violet ozone (UV/O3) treatments can improve the film quality for both deposited and thermally grown oxide, and 3) Compared with RTO, the breakdown field of the RTCVD oxide is less dependent on the surface pre-cleaning treatment. These results indicate that silicon wafer surface cleaning techniques typically used for silicon epitaxial processes are not necessarily applicable to oxide film formation in RTP reactors.

Low Temperature Growth of GaAs on Si Substrates for Ultra-fast Photoconductive Switches

2003 ◽  
Vol 768 ◽  
Author(s):  
Kai Ma ◽  
Ryohei Urata ◽  
David A. B. Miller ◽  
James S. Harris
Keyword(s):  
Low Temperature ◽  
Sampling Technique ◽  
High Energy ◽  
Surface Cleaning ◽  
Ex Situ ◽  
Wafer Surface ◽  
Gaas Film ◽  
Gaas On Si ◽  
Photoconductive Switches ◽  
Lt Gaas

AbstractWe have grown GaAs directly on silicon substrates by molecular beam epitaxy (MBE) at low substrate temperatures (∼250 °C). The silicon wafer surface cleaning and GaAs film growth processes were done at temperatures lower than the Si-Al eutectic temperature, in order to enable monolithic integration of low-temperature-grown-GaAs (LT-GaAs) photoconductive switches with Si-CMOS circuits. In situ reflection high-energy electron diffraction (RHEED), ex situ x-ray diffraction (XRD) and atomic force microscopy (AFM) studies were performed to characterize the LT-GaAs film quality. The film surfaces show less than 1 nm root-mean-square (rms) roughness and the anti-phase domain (APD) density is below the XRD detection limit. Metal-semiconductor-metal (MSM) photoconductive switches were made using this material. A time-resolved electro-optic sampling technique was used to determine the responsivity and speed of the switches. A full-width at half-maximum (FWHM) switching time of ∼2 picoseconds was achieved and the responsivity of switches made from LT-GaAs on Si material was comparable to that of switches made from LT-GaAs on GaAs material.

Resist Stripping and Surface Cleaning Technique Using High Speed Steam-Droplet Mixture

2007 ◽  
Author(s):  
T. Sanada ◽  
M. Shirota ◽  
M. Watanabe ◽  
Y. Morita ◽  
M. Yamase
Keyword(s):  
High Speed ◽  
Video Camera ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
High Speed Video Camera ◽  
Digital Microscope ◽  
Phase Doppler Anemometer ◽  
Free Environment ◽  
Droplet Mixture ◽  
Si Wafer

A novel resist stripping and surface cleaning technique is proposed. We have improved wet vapor resist stripping technique (Ojima & Ohmi) using high-speed steam and purified water droplets mixture. Relatively low pressure steam (0.1MPa∼0.2MPa) is mixed with purified water in front of the nozzle, and sprayed to Si wafer with resist. Using this new technique, we are able to strip resist without chemicals very quickly and also to clean a wafer surface, i.e., to eliminate some particles. This technique has an advantage not only in reducing some processes of semiconductor manufacturing but also in maintaining chemical-free environment. Both droplet velocity and diameter distributions were measured by Phase Doppler Anemometer (PDA). Resist stripping was observed with a high-speed video camera and the fringes of the removed resist region were observed with a digital microscope. Mechanism of this resist stripping process is discussed.

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