New LC (Laser Crystallization) Method for GHz Level TFT Operation

2019 ◽  
Vol 8 (1) ◽  
pp. 217-222
Author(s):  
Koichiro Tanaka ◽  
Takatsugu Omata ◽  
Tomoaki Moriwaka ◽  
Hirotada Oishi ◽  
Shunpei Yamazaki
Keyword(s):  
Laser Crystallization ◽  
Crystallization Method

Fabrication of Location-Controlled Silicon Crystal Grains by Combining Excimer Laser Irradiation with Nanometer-sized A-Si

2006 ◽  
Vol 910 ◽  
Author(s):  
Chun-Chien Tsai ◽  
Ting-Kuo Chang ◽  
Hsiu-Hsin Chen ◽  
Bo-Ting Chen ◽  
Huang-Chung Cheng
Keyword(s):  
Excimer Laser ◽  
High Performance ◽  
Silicon Crystal ◽  
Field Effect Mobility ◽  
Laser Crystallization ◽  
Crystallization Method ◽  
Excimer Laser Irradiation ◽  
Excimer Laser Crystallization ◽  
Good Uniformity ◽  
Crystal Grains

AbstractIn this paper, location-controlled Silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-μm-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm2/Vs can be fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated Silicon grains are essential to high performance and good uniformity thin film transistors.

A New Nucleation-Site-Control Excimer-Laser-Crystallization Method

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3049-3054 ◽  
Author(s):  
Mitsuru Nakata ◽  
Kouki Inoue ◽  
Masakiyo Matsumura
Keyword(s):  
Excimer Laser ◽  
Nucleation Site ◽  
Laser Crystallization ◽  
Crystallization Method ◽  
Excimer Laser Crystallization ◽  
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