High-mobility poly-Si TFT's fabricated by a novel excimer laser crystallization method

1992 ◽  
Vol 39 (11) ◽  
pp. 2664-2665 ◽  
Author(s):  
K. Shimizu ◽  
O. Sugiura ◽  
M. Matsumura
2006 ◽  
Vol 910 ◽  
Author(s):  
Chun-Chien Tsai ◽  
Ting-Kuo Chang ◽  
Hsiu-Hsin Chen ◽  
Bo-Ting Chen ◽  
Huang-Chung Cheng

AbstractIn this paper, location-controlled Silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-μm-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm2/Vs can be fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated Silicon grains are essential to high performance and good uniformity thin film transistors.


2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3049-3054 ◽  
Author(s):  
Mitsuru Nakata ◽  
Kouki Inoue ◽  
Masakiyo Matsumura

2018 ◽  
Vol 39 (3) ◽  
pp. 367-370 ◽  
Author(s):  
Chan-Yu Liao ◽  
Shih-Hung Chen ◽  
Wen-Hsien Huang ◽  
Chang-Hong Shen ◽  
Jia-Min Shieh ◽  
...  

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