Sidewall Angle Influence on the FinFET Analog Parameters

2019 ◽  
Vol 9 (1) ◽  
pp. 37-45
Author(s):  
R. Giacomini ◽  
Joao A. Martino ◽  
Marcelo A. Pavanello
Keyword(s):  
Sidewall Angle ◽  
Analog Parameters

The sidewall angle dependence of CDSEM measurements and its impact on CD process control

2005 ◽  
Author(s):  
Justin J. Hwu ◽  
Homayoun Kiamanesh ◽  
Sukhbir Dulay ◽  
Peter Wilkens
Keyword(s):  
Process Control ◽  
Angle Dependence ◽  
Sidewall Angle

Effects of Fin Sidewall Angle on Subthreshold Characteristics of Junctionless Multigate Transistors

2013 ◽  
Vol 52 (10R) ◽  
pp. 104302 ◽  
Author(s):  
Haijun Lou ◽  
Dan Li ◽  
Yan Dong ◽  
Xinnan Lin ◽  
Shengqi Yang ◽  
...  
Keyword(s):  
Sidewall Angle

scholarly journals The Influence of Oxide Thickness and Indium Amount on the Analog Parameters of InxGa1–xAs nTFETs

2017 ◽  
Vol 64 (9) ◽  
pp. 3595-3600 ◽  
Author(s):  
Caio C. M. Bordallo ◽  
Joao Antonio Martino ◽  
Paula G. D. Agopian ◽  
Alireza Alian ◽  
Yves Mols ◽  
...  
Keyword(s):  
Oxide Thickness ◽  
Analog Parameters

Ground Plane influence on UTBB SOI nMOSFET analog parameters

2015 ◽  
Author(s):  
Vitor T. Itocazu ◽  
Victor Sonnenberg ◽  
Eddy Simoen ◽  
Cor Claeys ◽  
Joao A. Martino
Keyword(s):  
Ground Plane ◽  
Analog Parameters

Influence of the STI sidewall angle on the induced channel stress in nanoscaled PMOSFETs

2012 ◽  
Vol 60 (10) ◽  
pp. 1639-1643
Author(s):  
Xiang Zhan Wang ◽  
Gui Xia Qin ◽  
Qian Luo
Keyword(s):  
Sidewall Angle

A novel method to measure the sidewall angle of MEMS structures

2017 ◽  
Author(s):  
Qiang Qin ◽  
Qiancheng Zhao ◽  
Fang Yang ◽  
Dacheng Zhang ◽  
Guizhen Yan
Keyword(s):  
Novel Method ◽  
Sidewall Angle

Dynamic switching characteristic dependence on sidewall angle for phase change memory

2012 ◽  
Vol 67 (1) ◽  
pp. 1-5 ◽  
Author(s):  
X.M. Long ◽  
X.S. Miao ◽  
J.J. Sun ◽  
X.M. Cheng ◽  
H. Tong ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Switching Characteristic ◽  
Dynamic Switching ◽  
Sidewall Angle ◽  
Change Memory

Controlling the sidewall angle of advanced attenuated phase-shift photomasks for 14nm and 10nm lithography

2013 ◽  
Author(s):  
Richard Wistrom ◽  
Yoshifumi Sakamoto ◽  
Jeffery Panton ◽  
Thomas Faure ◽  
Takeshi Isogawa ◽  
...  
Keyword(s):  
Phase Shift ◽  
Sidewall Angle

scholarly journals Boosting the MOSFETs Matching by Using Diamond Layout Style

2017 ◽  
Vol 12 (1) ◽  
pp. 33-41
Author(s):  
Vinicius Vono Peruzzi ◽  
Christian Renaux ◽  
Denis Flandre ◽  
Salvador Pinillos Gimenez
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Cmos Integrated Circuits ◽  
Alternative Technique ◽  
Figures Of Merit ◽  
Analog Parameters

This manuscript presents an experimental comparative study between the Metal-Oxide-Semiconductor (MOS) Silicon-On-Insulator (SOI) Field Effect Transistors, n-type, (nMOSFETs) matching, which are implemented with the hexagonal gate shape (Diamond) and standard rectangular ones. The main analog parameters and figures of merit of 360 devices are investigated. The results establish that the Diamond SOI MOSFETs with α angles equal to 90o can boost in more than in average -45.8% with a standard deviation of 20.1% the devices matching in comparison to those found with the typical rectangular SOI MOSFETs, concerning the same gate area and bias conditions. Consequently, the Diamond layout style is an alternative technique to reduce the nMOSFETs’ mismatching, considering the analog SOI Complementary MOS (CMOS) integrated circuits (ICs) applications.

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