Fermi Level and Magnetic GaMnN Thin Films

2019 ◽  
Vol 3 (25) ◽  
pp. 423-427
Author(s):  
Nadia A. El-Masry ◽  
F. Erdem Arkun ◽  
Acar Berkman ◽  
Amr Mahrous ◽  
John M. Zavada ◽  
...  
Keyword(s):  
Thin Films ◽  
Fermi Level

scholarly journals In Situ Measurement and Control of the Fermi Level in Colloidal Nanocrystal Thin Films during Their Fabrication

2018 ◽  
Vol 9 (24) ◽  
pp. 7165-7172 ◽  
Author(s):  
Sebastian Volk ◽  
Nuri Yazdani ◽  
Olesya Yarema ◽  
Maksym Yarema ◽  
Deniz Bozyigit ◽  
...  
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
In Situ Measurement ◽  
And Control ◽  
Measurement And Control

Role of Surface Band Gap Widening in Cu(In, Ga)(Se, S)2 Thin-Films for the Photovoltaic Performance of ZnO/CdS/Cu(In, Ga)(Se, S)2 Heterojunction Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
U. Rau ◽  
M. Turcu
Keyword(s):  
Thin Films ◽  
Surface Layer ◽  
Solar Cells ◽  
Fermi Level ◽  
Band Gap ◽  
Photovoltaic Performance ◽  
Heterojunction Solar Cells ◽  
Fermi Level Pinning ◽  
Device Efficiency

AbstractNumerical simulations are used to investigate the role of the Cu-poor surface defect layer on Cu(In, Ga)Se2 thin-films for the photovoltaic performance of ZnO/CdS/Cu(In, Ga)Se2 heterojunction solar cells. We model the surface layer either as a material which is n-type doped, or as a material which is type-inverted due to Fermi-level pinning by donor-like defects at the interface with CdS. We further assume a band gap widening of this layer with respect to the Cu(In, Ga)Se2 bulk. This feature turns out to represent the key quality of the Cu(In, Ga)Se2 surface as it prevents recombination at the absorber/CdS buffer interface. Whether the type inversion results from n-type doping or from Fermi-level pinning is only of minor importance as long as the surface layer does not imply a too large number of excess defects in its bulk or at its interface with the normal absorber. With increasing number of those defects an n-type layer proofs to be less sensitive to material deterioration when compared to the type-inversion by Fermi-level pinning. For wide gap chalcopyrite solar cells the internal valence band offset between the surface layer and the chalcopyrite appears equally vital for the device efficiency. However, the unfavorable band-offsets of the ZnO/CdS/Cu(In, Ga)Se2 heterojunction limit the device efficiency because of the deterioration of the fill factor.

Fermi Level Engineering of Mn2RuxGa Thin Films

2018 ◽  
Author(s):  
K. E. Siewierska ◽  
G. Atcheson ◽  
A. Jha ◽  
R. Smith ◽  
G. Dennehy ◽  
...  
Keyword(s):  
Thin Films ◽  
Fermi Level

scholarly journals Influence of Sodium and Rubidium Postdeposition Treatment on the Quasi-Fermi Level Splitting of Cu(In,Ga)Se2 Thin Films

2018 ◽  
Vol 8 (5) ◽  
pp. 1320-1325 ◽  
Author(s):  
Max Hilaire Wolter ◽  
Benjamin Bissig ◽  
Enrico Avancini ◽  
Romain Carron ◽  
Stephan Buecheler ◽  
...  
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
Quasi Fermi Level ◽  
Level Splitting

Tuning of fermi level in antimony telluride thin films by low-energy Fe−-ion implantation

2021 ◽  
Vol 127 (12) ◽  
Author(s):  
Jyoti Yadav ◽  
Rini Singh ◽  
M. D. Anoop ◽  
Nisha Yadav ◽  
N. Srinivasa Rao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Fermi Level ◽  
Low Energy ◽  
Antimony Telluride

High energy photon induced Fermi-level shift of Ba 0.5 Sr 0.5 TiO 3 thin films

2017 ◽  
Vol 639 ◽  
pp. 107-112 ◽  
Author(s):  
Surendra Singh Barala ◽  
Vijendra Singh Bhati ◽  
Mahesh Kumar
Keyword(s):  
Thin Films ◽  
Fermi Level ◽  
High Energy ◽  
Level Shift ◽  
High Energy Photon ◽  
Energy Photon ◽  
Fermi Level Shift

Observation of a Narrow Pseudogap near the Fermi Level of AlCuFe Quasicrystalline Thin Films

1995 ◽  
Vol 74 (18) ◽  
pp. 3656-3659 ◽  
Author(s):  
T. Klein ◽  
O. G. Symko ◽  
D. N. Davydov ◽  
A. G. M. Jansen
Keyword(s):  
Thin Films ◽  
Fermi Level
Sign in / Sign up

Export Citation Format

Share Document