The Impact of F and N Incorporation Technique on Advanced Gate Stacks

2019 ◽  
Vol 6 (3) ◽  
pp. 637-653
Author(s):  
Jiro Yugami ◽  
Takashi Hayashi ◽  
Yukio Nishida ◽  
Masao Inoue
Keyword(s):  
Gate Stacks ◽  
N Incorporation ◽  
The Impact

NEGATIVE BIAS TEMPERATURE INSTABILITY IN TIN/HF-SILICATE BASED GATE STACKS

2007 ◽  
Vol 17 (01) ◽  
pp. 129-141
Author(s):  
N. A. CHOWDHURY ◽  
D. MISRA ◽  
N. RAHIM
Keyword(s):  
Interface State ◽  
Initial Time ◽  
Negative Bias ◽  
Gate Stacks ◽  
Negative Bias Temperature Instability ◽  
Threshold Voltage Shift ◽  
Temperature Instability ◽  
Bias Temperature Instability ◽  
High Bias ◽  
The Impact

This work studies the effects of negative bias temperature instability (NBTI) on p-channel MOSFETS with TiN/HfSi x O y (20% SiO 2 based high-κ gate stacks under different gate bias and elevated temperature conditions. For low bias conditions, threshold voltage shift (ΔVT) is most probably due to the mixed degradation within the bulk high-κ. For moderately high bias conditions, H-species dissociation in the presence of holes and subsequent diffusion may be initially responsible for interface state and positively charged bulk trap generation. Initial time, temperature and oxide electric field dependence of ΔVT in our devices shows an excellent match with that of SiO 2 based devices, which is explained by reaction-diffusion (R-D) model of NBTI. Under high bias condition at elevated temperatures, due to higher Si - H bond-annealing/bond-breaking ratio, the experimentally observed absence of the impact ionization induced hot holes at the interfacial layer (IL)/ Si interface probably limits the interface state generation and ΔVT as they quickly reach saturation.

Probing at Nanoscale Underneath the Gate Oxides in 4H-SiC MOS-Based Devices Annealed in N2O and POCl3

2014 ◽  
Vol 806 ◽  
pp. 143-147
Author(s):  
P. Fiorenza ◽  
Marilena Vivona ◽  
L.K. Swanson ◽  
Filippo Giannazzo ◽  
C. Bongiorno ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Cross Sectional ◽  
Direct Demonstration ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
N Incorporation ◽  
The Impact ◽  
Post Deposition ◽  
Partial Compensation

In this paper a comparative study of the impact of N2O and POCl3 annealing on the SiO2/SiC system is presented, combining nanoscale electrical characterization of SiC surface doping by scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) to the conventional capacitance-voltage (C-V) and current-voltage (I-V) measurements on MOS-based devices. A significant reduction of the interface states density (from 1.8×1012 to 5.7×1011 cm-2eV-1) and, correspondingly, an increase in the carrier mobility (from 19 to 108 cm2V-1s-1) was found moving from N2O to POCl3 annealing. Furthermore, SSRM measurements on bare p+-type SiC regions selectively exposed to N2O and POCl3 at high temperature provided the direct demonstration of the incorporation of N or P-related donors in the SiC surface, leading to a partial compensation of substrate acceptors during N2O treatment and to an overcompensation during POCl3 annealing. Finally, cross-sectional SCM profiles performed on epitaxial n-doped 4H-SiC with 45 nm SiO2 (subjected to post deposition annealing in the two ambients) allowed to quantify the active donors concentrations associated to P or N incorporation under the gate oxide, showing almost a factor of ten higher doping (4.5×1018cm-3 vs 5×1017cm-3) in the case of P related donors.

scholarly journals Influence of light on particulate organic matter utilization by attached and free-living marine bacteria

2019 ◽  
Author(s):  
Laura Gomez-Consarnau ◽  
David M. Needham ◽  
Peter K. Weber ◽  
Jed A. Fuhrman ◽  
Xavier Mayali
Keyword(s):  
Microbial Community ◽  
Amplicon Sequencing ◽  
Time Of Day ◽  
Rrna Gene ◽  
Free Living ◽  
Isotope Incorporation ◽  
The Pacific ◽  
C And N ◽  
N Incorporation ◽  
The Impact

While the impact of light on primary productivity in aquatic systems has been studied for decades, the role light plays in the degradation of photosynthetically-produced biomass is less well understood. We investigated the patterns of light-induced particle breakdown and bacterial assimilation of detrital C and N using13C and15N labeled freeze-thawed diatom cells incubated in laboratory microcosms with a marine microbial community freshly-collected from the Pacific Ocean. Particles incubated in the dark resulted in increased bacterial counts and dissolved organic carbon concentrations compared to those incubated in the light. Light also influenced the attached and free-living microbial community structure as detected by 16S rRNA gene amplicon sequencing. For example, bacterial taxa from the Sphingobacteriia were enriched on dark-incubated particles and taxa from the family Flavobacteriaceae and the genus Pseudoalteromonas were numerically enriched on particles in the light. Isotope incorporation analysis by phylogenetic microarray and NanoSIMS (a method called Chip-SIP) identified free-living and attached microbial taxa able to incorporate N and C from the particles. Some taxa, including members of the Flavobacteriaceae and Cryomorphaceae, exhibited increased isotope incorporation in the light, suggesting the use of photoheterotrophic metabolisms. In contrast, some members of Oceanospirillales and Rhodospirillales showed decreased isotope incorporation in the light, suggesting that their heterotrophic metabolism, particularly when occurring on particles, might increase at night or may be inhibited by sunlight. These results show that light influences particle degradation and C and N incorporation by attached bacteria, suggesting that the transfer between particulate and free-living phases are likely affected by external factors that change with the light regime, such as time of day, depth and season.

On the impact of high-κ gate stacks on mobility: A Monte Carlo study including coupled SO phonon-plasmon scattering

2006 ◽  
Vol 6 (1-3) ◽  
pp. 1-5 ◽  
Author(s):  
Giulio Ferrari ◽  
J. R. Watling ◽  
S. Roy ◽  
J. R. Barker ◽  
A. Asenov ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Gate Stacks ◽  
The Impact

The Impact of an Ultrathin Y2O3Layer on GeO2Passivation in Ge MOS Gate Stacks

2017 ◽  
Vol 64 (8) ◽  
pp. 3303-3307 ◽  
Author(s):  
Yujin Seo ◽  
Tae In Lee ◽  
Chang Mo Yoon ◽  
Bo-Eun Park ◽  
Wan Sik Hwang ◽  
...  
Keyword(s):  
Gate Stacks ◽  
The Impact ◽  
Mos Gate

The impact of energy barrier height on border traps in the metal insulator semicondoctor gate stacks on III–V semiconductors

2016 ◽  
Vol 55 (8S2) ◽  
pp. 08PC01 ◽  
Author(s):  
Shinichi Yoshida ◽  
Satoshi Taniguchi ◽  
Hideki Minari ◽  
Dennis Lin ◽  
Tsvetan Ivanov ◽  
...  
Keyword(s):  
Barrier Height ◽  
Energy Barrier ◽  
Gate Stacks ◽  
Metal Insulator ◽  
The Impact

Formation of Lunar Craters and Bright Rays as a Result of Meteorite Impacts

1962 ◽  
Vol 14 ◽  
pp. 415-418
Author(s):  
K. P. Stanyukovich ◽  
V. A. Bronshten
Keyword(s):  
Explosive Charge ◽  
The Moon ◽  
Meteorite Impacts ◽  
The Earth ◽  
Lunar Craters ◽  
The Impact

The phenomena accompanying the impact of large meteorites on the surface of the Moon or of the Earth can be examined on the basis of the theory of explosive phenomena if we assume that, instead of an exploding meteorite moving inside the rock, we have an explosive charge (equivalent in energy), situated at a certain distance under the surface.

Sign in / Sign up

Export Citation Format

Share Document