Stress-Induced Leakage Current in Magnetic Tunnel Junctions with Thin AlOx Barrier

2019 ◽  
Vol 6 (3) ◽  
pp. 343-354
Author(s):  
Tadashi Mihara ◽  
Yoshinari Kamakura ◽  
Masato Morifuji ◽  
Kenji Taniguchi
Keyword(s):  
Leakage Current ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Stress Induced Leakage Current

Degradation and SILC Effects of RPECVD sub-2.0nm Oxide/Nitride and Oxynitride Dielectrics Under Constant Current Stress

2002 ◽  
Vol 716 ◽  
Author(s):  
Yi-Mu Lee ◽  
Yider Wu ◽  
Joon Goo Hong ◽  
Gerald Lucovsky
Keyword(s):  
Leakage Current ◽  
Electrical Performance ◽  
Constant Current ◽  
Continuous Increase ◽  
Current Stress ◽  
Thermal Oxide ◽  
Stress Induced Leakage Current ◽  
Boron Penetration ◽  
Soft Breakdown ◽  
Induced Defects

AbstractConstant current stress (CCS) has been used to investigate the Stress-Induced Leakage Current (SILC) to clarify the influence of boron penetration and nitrogen incorporation on the breakdown of p-channel devices with sub-2.0 nm Oxide/Nitride (O/N) and oxynitride dielectrics prepared by remote plasma enhanced CVD (RPECVD). Degradation of MOSFET characteristics correlated with soft breakdown (SBD) and hard breakdown (HBD), and attributed to the increased gate leakage current are studied. Gate voltages were gradually decreased during SBD, and a continuous increase in SILC at low gate voltages between each stress interval, is shown to be due to the generation of positive traps which are enhanced by boron penetration. Compared to thermal oxides, stacked O/N and oxynitride dielectrics with interface nitridation show reduced SILC due to the suppression of boron penetration and associated positive trap generation. Devices stressed under substrate injection show harder breakdown and more severe degradation, implying a greater amount of the stress-induced defects at SiO2/substrate interface. Stacked O/N and oxynitride devices also show less degradation in electrical performance compared to thermal oxide devices due to an improved Si/SiO2 interface, and reduced gate-to-drain overlap region.

Structural and magneto-transport properties of lattice-mismatched epitaxial Fe/SrO/MgO/Fe magnetic tunnel junctions

2020 ◽  
Vol 59 (10) ◽  
pp. 103001
Author(s):  
Aurelie Spiesser ◽  
Shintaro Kon ◽  
Yukiko Yasukawa ◽  
Shinji Yuasa ◽  
Hiroshi Imamura ◽  
...  
Keyword(s):  
Transport Properties ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals Electrical characterisation of higher order spin wave modes in vortex-based magnetic tunnel junctions

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Alex. S. Jenkins ◽  
Lara San Emeterio Alvarez ◽  
Samh Memshawy ◽  
Paolo Bortolotti ◽  
Vincent Cros ◽  
...  
Keyword(s):  
Spin Wave ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Higher Order ◽  
Spin Torque ◽  
Micromagnetic Simulations ◽  
Higher Order Modes ◽  
Spin Diode ◽  
Super High Frequency ◽  
Wave Modes

AbstractNiFe-based vortex spin-torque nano-oscillators (STNO) have been shown to be rich dynamic systems which can operate as efficient frequency generators and detectors, but with a limitation in frequency determined by the gyrotropic frequency, typically sub-GHz. In this report, we present a detailed analysis of the nature of the higher order spin wave modes which exist in the Super High Frequency range (3–30 GHz). This is achieved via micromagnetic simulations and electrical characterisation in magnetic tunnel junctions, both directly via the spin-diode effect and indirectly via the measurement of the coupling with the gyrotropic critical current. The excitation mechanism and spatial profile of the modes are shown to have a complex dependence on the vortex core position. Additionally, the inter-mode coupling between the fundamental gyrotropic mode and the higher order modes is shown to reduce or enhance the effective damping depending upon the sense of propagation of the confined spin wave.

Interfacial Control via Reversible Ionic Motion in Battery‐Like Magnetic Tunnel Junctions

2021 ◽  
pp. 2100512
Author(s):  
Guofei Long ◽  
Qian Xue ◽  
Qiang Li ◽  
Yu Shi ◽  
Lin Li ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Ionic Motion

scholarly journals Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Shoma Yasui ◽  
Syuta Honda ◽  
Jun Okabayashi ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers

2021 ◽  
pp. 1-1
Author(s):  
H. Honjo ◽  
K. Nishioka ◽  
S. Miura ◽  
H. Naganuma ◽  
T. Watanabe ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
...  
Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

scholarly journals Micromagnetic instabilities in spin-transfer switching of perpendicular magnetic tunnel junctions

2021 ◽  
Vol 103 (1) ◽  
Author(s):  
Nahuel Statuto ◽  
Jamileh Beik Mohammadi ◽  
Andrew D. Kent
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Spin Transfer
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