Effect of Oxide on Trench Edge Defect Formation in Ion-Implanted Silicon

2007 ◽  
Vol 10 (6) ◽  
pp. H184 ◽  
Author(s):  
N. Burbure ◽  
N. G. Rudawski ◽  
K. S. Jones
Keyword(s):  
Defect Formation ◽  
Edge Defect ◽  
Ion Implanted

Finite Element and Experimental Analysis of Edge Defects Formation during Orthogonal Cutting of SiCp/Al Composites

2012 ◽  
Vol 500 ◽  
pp. 146-151 ◽  
Author(s):  
Ning Hou ◽  
Li Zhou ◽  
Shu Tao Huang ◽  
Li Fu Xu
Keyword(s):  
Finite Element ◽  
Chip Formation ◽  
Defect Formation ◽  
Orthogonal Cutting ◽  
Cutting Speed ◽  
Rake Angle ◽  
Critical Transition ◽  
Cutting Depth ◽  
Edge Defect ◽  
Edge Defects

In this paper, a finite element method was used to dynamically simulate the process of the edge defects formation during orthogonal cutting SiCp/Al composites. The influence of the cutting speed, cutting depth and rake angle of the PCD insert on the size of the edge defects have been investigated by using scanning electron. According to the simulated results, it can be provided that the cutting layer material has an effect on transfer stress and hinder the chip formation in the critical transition stage, and the critical transition point and distance are defined in this stage. The negative shear phenomenon is found when the chip transit to the edge defects in the flexure deformation stage, so the process of the chip formation is the basis of the edge defects formation. In addition, the relationship between the nucleation and propagation direction of the crack and the variation of the edge defect shape on the workpiece was investigated by theory, and it found that the negative shear angle formation is the primary cause of the edge defect formation. A mixed mode crack is found in the crack propagation stage. The sizes of edge defects were measured by the experiment and simulation, and the edge defect size decrease with the increasing of tool rake angle, while increase with increasing cutting depth and cutting speed.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

scholarly journals Spontaneous edge-defect formation and defect-induced conductance suppression in graphene nanoribbons

2010 ◽  
Vol 82 (11) ◽  
Author(s):  
Jia Li ◽  
Zuanyi Li ◽  
Gang Zhou ◽  
Zhirong Liu ◽  
Jian Wu ◽  
...  
Keyword(s):  
Defect Formation ◽  
Graphene Nanoribbons ◽  
Edge Defect

Junction Formation in Silicon by Rapid Thermal Annealing

1993 ◽  
Vol 300 ◽  
Author(s):  
Richard B. Fair
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Defect Formation ◽  
Annealing Process ◽  
Dopant Activation ◽  
The Past ◽  
Silicon Devices ◽  
Transient Diffusion ◽  
Junction Formation ◽  
Ion Implanted

ABSTRACTThe feasibility of using isothermal RTA in annealing ion implanted layers for forming junctions has been investigated for the past 10 years. While many of the scientific details surrounding defect formation, transient diffusion and dopant activation remain to be clarified, RTA intrinsically is a viable annealing process which is essential for fabricating advanced silicon devices.

Investigation of defect formation in boron ion-implanted silicon during annealing

1981 ◽  
Vol 68 (2) ◽  
pp. 519-529 ◽  
Author(s):  
F. F. Komarov ◽  
V. D. Kuryazov ◽  
V. S. Solovev ◽  
S. Yu. Shiryaev
Keyword(s):  
Defect Formation ◽  
Ion Implanted
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