Defect formation chemistry of EL2 center atEc−0.83 eV in ion‐implanted gallium arsenide

1982 ◽  
Vol 53 (12) ◽  
pp. 8653-8662 ◽  
Author(s):  
G. P. Li ◽  
K. L. Wang
Keyword(s):  
Gallium Arsenide ◽  
Defect Formation ◽  
Ion Implanted

Ion‐implanted nitrogen in gallium arsenide

1973 ◽  
Vol 44 (10) ◽  
pp. 4393-4399 ◽  
Author(s):  
A. H. Kachare ◽  
W. G. Spitzer ◽  
A. Kahan ◽  
F. K. Euler ◽  
T. A. Whatley
Keyword(s):  
Gallium Arsenide ◽  
Ion Implanted

Ultrafast carrier trapping in high energy ion implanted gallium arsenide

1996 ◽  
Vol 68 (16) ◽  
pp. 2225-2227 ◽  
Author(s):  
C. Jagadish ◽  
H. H. Tan ◽  
A. Krotkus ◽  
S. Marcinkevicius ◽  
K. P. Korona ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
High Energy ◽  
Carrier Trapping ◽  
Ultrafast Carrier ◽  
Ion Implanted

Transient and Furnace Annealing of Ion Implanted Gallium Arsenide

1980 ◽  
Vol 1 ◽  
Author(s):  
J. S. Williams ◽  
H. B. Harrison
Keyword(s):  
Gallium Arsenide ◽  
Solid Phase ◽  
Pulsed Lasers ◽  
Physical Processes ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Cw Laser ◽  
Similarities And Differences ◽  
Solid Phase Regrowth ◽  
Ion Implanted

ABSTRACTThis review examines the annealing behaviour of ion implanted gallium arsenide during furance, laser and e-beam processing.The two annealing regimes, namely solid phase regrowth via furnace or CW laser/e-beam annealing and liquid phase epitaxy produced by pulsed lasers/e-beam, are examined in some detail.Emphasis is placed upon an understanding of the physical processes which are important during the various annealing modes.Comparison with the annealing behaviour of ion implantedelemental semiconductors(notably silicon) is made throughout the review to highlight relevant similarities and differences between compound and elemental semiconductors.The electrical properties of annealed gallium arsenide layers are not treatedin any detail, although particular observations which are relevant to the annealing processes are briefly discussed.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

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