Temperature-dependent photoluminescence from patterned InAs quantum dots formed using metalorganic chemical vapor epitaxy

2006 ◽  
Vol 99 (3) ◽  
pp. 033503 ◽  
Author(s):  
D. L. Huffaker ◽  
C. P. Hains ◽  
N. Nuntawong ◽  
Y. C. Xin ◽  
P. S. Wong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Temperature Dependent Photoluminescence ◽  
Metalorganic Chemical

scholarly journals Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

2015 ◽  
Author(s):  
Ming Xu ◽  
Alexandre Jaffré ◽  
José Alvarez ◽  
Jean-Paul Kleider ◽  
Apichat Jittrong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Temperature Dependent Photoluminescence

Effects of a InGaAs Strained Layer on Structures and Photoluminescence Characteristics of InAs Quantum Dots

2010 ◽  
Vol 148-149 ◽  
pp. 897-902
Author(s):  
Jian Ming Yao ◽  
Ling Min Kong ◽  
Shi Lai Wang
Keyword(s):  
Quantum Dots ◽  
Integral Intensity ◽  
Wetting Layer ◽  
Ingaas Layer ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
Strained Layer ◽  
Gaas Matrix ◽  
Electronic Microscope ◽  
Temperature Dependent Photoluminescence

The influences of a thin InGaAs layer grown on GaAs(100) substrate before deposited InAs self-assembled quantum dots(SAQDs) were experimentally investigated. Scanning electronic microscope (SEM) measurements show that the InGaAs strained layer may release the strain between wetting layer and QDs, and then enlarge size of QDs. When the thickness of InAs layer is small, the QDs are chained. Temperature dependent photoluminescence (TDPL) measurements show that the PL peaks of InAs QDs with In0.1Ga0.9As show much more red shift compared with the QDs directly deposited on GaAs matrix, and PL integral intensity enhances as T rises from 50K to 90K. We attribute this enhancement to the small potential barrier between WL and QDs produced by the InGaAs stained layer.

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