Supercooling, Preferred Orientation, and Inverse Segregation in Lead -Antimony Alloys

1957 ◽  
Vol 104 (3) ◽  
pp. 133 ◽  
Author(s):  
A. C. Simon ◽  
E. L. Jones
Keyword(s):  
Preferred Orientation ◽  
Inverse Segregation ◽  
Antimony Alloys

The Microstructure of Shock-Synthesized Diamond

1967 ◽  
Vol 25 ◽  
pp. 324-325
Author(s):  
Lucien F. Trueb
Keyword(s):  
Single Crystals ◽  
Preferred Orientation ◽  
High Magnification ◽  
Texture Pattern ◽  
Shock Process ◽  
New Type ◽  
Diffraction Diagram

A new type of synthetic industrial diamond formed by an explosive shock process has been recently developed by the Du Pont Company. This material consists of a mixture of two basically different forms, as shown in Figure 1: relatively flat and compact aggregates of acicular crystallites, and single crystals in the form of irregular polyhedra with straight edges.Figure 2 is a high magnification micrograph typical for the fibrous aggregates; it shows that they are composed of bundles of crystallites 0.05-0.3 μ long and 0.02 μ. wide. The selected area diffraction diagram (insert in Figure 2) consists of a weak polycrystalline ring pattern and a strong texture pattern with arc reflections. The latter results from crystals having preferred orientation, which shows that in a given particle most fibrils have a similar orientation.

Existence of Cubic ZrO2 at 300°C on Bulk Zirconium

1969 ◽  
Vol 27 ◽  
pp. 166-167
Author(s):  
R.A. Ploc
Keyword(s):  
Metal Oxide ◽  
Metal Substrate ◽  
Preferred Orientation ◽  
Monoclinic Zirconia ◽  
Epitaxial Relationship

The manner in which ZrO2 forms on zirconium at 300°C in air has been discussed in the first reference. In short, monoclinic zirconia nucleates and grows with a preferred orientation relative to the metal substrate. The mode of growth is not well understood since an epitaxial relationship which gives minimum misfit between the zirconium ions in the metal/oxide combination is not realized. The reason may be associated with a thin cubic or tetragonal layer of ZrO2 between the inner oxygen saturated metal and the outer monoclinic zirconia.

Preferred orientation of rolling-induced ε martensite in an Fe-Mn-Si alloy

2003 ◽  
Vol 112 ◽  
pp. 365-368 ◽  
Author(s):  
K. K. Jee ◽  
W. Y. Jang ◽  
Y. H. Chung
Keyword(s):  
Preferred Orientation ◽  
Ε Martensite

Measurement of growth rates for single crystals and pressed tablets of CuSO4.5 H2O on a rotating disc

1989 ◽  
Vol 54 (11) ◽  
pp. 2951-2961 ◽  
Author(s):  
Miloslav Karel ◽  
Jaroslav Nývlt
Keyword(s):  
Growth Rate ◽  
Single Crystal ◽  
Single Crystals ◽  
Growth Rates ◽  
Diffusion Coefficients ◽  
Preferred Orientation ◽  
Rotating Disc ◽  
Dissolution Rates ◽  
Rates Of Growth ◽  
Good Agreement

Measured growth and dissolution rates of single crystals and tablets were used to calculate the overall linear rates of growth and dissolution of CuSO4.5 H2O crystals. The growth rate for the tablet is by 20% higher than that calculated for the single crystal. It has been concluded that this difference is due to a preferred orientation of crystal faces on the tablet surface. Calculated diffusion coefficients and thicknesses of the diffusion and hydrodynamic layers in the vicinity of the growing or dissolving crystal are in good agreement with published values.

Titanohematite lattice-preferred orientation and magnetic anisotropy in high-temperature mylonites

2002 ◽  
Vol 198 (1-2) ◽  
pp. 77-92 ◽  
Author(s):  
Jérôme Bascou ◽  
M.Irene B. Raposo ◽  
Alain Vauchez ◽  
Marcos Egydio-Silva
Keyword(s):  
High Temperature ◽  
Magnetic Anisotropy ◽  
Preferred Orientation ◽  
Lattice Preferred Orientation

Phase transformation and preferred orientation in carboxylate derived ZrO2 thin films on silicon substates

1992 ◽  
Vol 7 (11) ◽  
pp. 3065-3071 ◽  
Author(s):  
Peir-Yung Chu ◽  
Isabelle Campion ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Phase Transformation ◽  
Heating Rate ◽  
Tetragonal Phase ◽  
Monoclinic Phase ◽  
Preferred Orientation ◽  
Si Substrate ◽  
Interfacial Diffusion ◽  
Deposited Films

Phase transformation and preferred orientation in ZrO2 thin films, deposited on Si(111) and Si(100) substrates, and prepared by heat treatment from carboxylate solution precursors were investigated. The deposited films were amorphous below 450 °C, transforming gradually to the tetragonal and monoclinic phases on heating. The monoclinic phase developed from the tetragonal phase displacively, and exhibited a strong (111) preferred orientation at temperature as low as 550 °C. The degree of preferred orientation and the tetragonal-to-monoclinic phase transformation were controlled by heating rate, soak temperature, and time. Interfacial diffusion into the film from the Si substrate was negligible at 700 °C and became significant only at 900 °C, but for films thicker than 0.5 μm, overall preferred orientation exceeded 90%.

Control over the preferred orientation of CIGS films deposited by magnetron sputtering using a wetting layer

2016 ◽  
Vol 12 (1) ◽  
pp. 59-66 ◽  
Author(s):  
Yong Yan ◽  
Fan Jiang ◽  
Lian Liu ◽  
Zhou Yu ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Preferred Orientation ◽  
Wetting Layer
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