Vapor Growth Parameters and Impurity Profiles on N-Type GaAs Films Grown on N[sup +]-GaAs by the Hydrogen-Water Vapor Process

1966 ◽  
Vol 113 (3) ◽  
pp. 240 ◽  
Author(s):  
K. L. Lawley
Keyword(s):  
Water Vapor ◽  
Growth Parameters ◽  
Hydrogen Water ◽  
Vapor Growth ◽  
Gaas Films ◽  
Impurity Profiles

Removal of Boron from Silicon by Hydrogen Water Vapor Treatment

JOM ◽  
1956 ◽  
Vol 8 (10) ◽  
pp. 1316-1319 ◽  
Author(s):  
H. C. Theuerer
Keyword(s):  
Water Vapor ◽  
Hydrogen Water ◽  
Vapor Treatment

Heteroepitaxy of Si, Ge, and GaAs Films on CaF2/Si Structures

1986 ◽  
Vol 67 ◽  
Author(s):  
H. Ishiwara ◽  
T. Asano ◽  
H. C. Lee ◽  
Y. Kuriyama ◽  
K. Seki ◽  
...  
Keyword(s):  
Smooth Surface ◽  
Field Effect Transistors ◽  
Growth Parameters ◽  
Growth Conditions ◽  
Heteroepitaxial Growth ◽  
Gate Electrodes ◽  
Gaas Films ◽  
Temperature And Growth ◽  
Si Films

ABSTRACTRecent progress in the research of heteroepitaxial growth of Si, Ge, and GaAs films on CaF2/Si structures is reviewed. Growth conditions and material properties of the Si/CaF2/Si structures are first discussed. It is shown that such growth techniques as the predeposition technique and the recrystallization method are useful to improve the crystalline quality of Si films on the CaF2/Si structures. Then, device application of the Si/CaF2/Si structure to field effect transistors with epitaxial MIS (metal-insulatorsemiconductor) gate electrodes is described. Finally, epitaxial growth of Ge and GaAs films on the CaF2/Si structure are discussed, in which such growth parameters as the substrate temperature and growth rate are optimized to obtain high-quality films with excellent crystallinity and smooth surface.

Improved MOCVD Growth of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
R.M. Lum ◽  
J.K. Klingert ◽  
B.A. Davidson ◽  
M.G. Lamont
Keyword(s):  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Growth Parameters ◽  
Buffer Layers ◽  
Double Crystal ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Gaas Films ◽  
Gaas Buffer Layer ◽  
Direct Growth

ABSTRACTIn the direct growth of GaAs on Si by MOCVD the overall quality of the heteroepitaxial film is controlled to a large extent by the growth parameters of the initial GaAs buffer layer. We have investigated the structural properties of this layer using Rutherford Backscattering Spectrometry (RBS) and X-ray double crystal diffractometry. The crystallinity of the buffer layer was observed to improve with increasing layer thickness in the range 10–100nm, and then to rapidly degrade for thicker layers. High temperature (750°C) annealing of the buffer layers resulted in considerable reordering of all but the thicker (>200 nm) layers. Alteration of the usual GaAs/Si growth sequence to include an in-situ anneal of the buffer layer after growth interruption yielded GaAs films with improved structural, optical and electrical properties.

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