A Deep Donor Level in n-type Silicon Carbide

1969 ◽  
Vol 116 (1) ◽  
pp. 109 ◽  
Author(s):  
M. J. Moore
Keyword(s):  
Silicon Carbide ◽  
Donor Level ◽  
Type Silicon ◽  
Deep Donor ◽  
Deep Donor Level

Deep Level Related Yellow Luminescence in P-Type GaN Grown by MBE on (0001) Sapphire

1999 ◽  
Vol 595 ◽  
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

AbstractYellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm−3 by spectral CL (T=5K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9- 1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

20 meV-deep donor level in InN film of 0.76 eV band gap grown by plasma-assisted nitrogen source

2004 ◽  
Vol 95 (12) ◽  
pp. 7998-8001 ◽  
Author(s):  
S. Z. Wang ◽  
S. F. Yoon ◽  
Y. X. Xia ◽  
S. W. Xie
Keyword(s):  
Band Gap ◽  
Nitrogen Source ◽  
Donor Level ◽  
Deep Donor ◽  
Deep Donor Level

scholarly journals Deep level related yellow luminescence in p-type GaN grown by MBE on (0001) sapphire

2000 ◽  
Vol 5 (S1) ◽  
pp. 754-760
Author(s):  
Giancarlo Salviati ◽  
Nicola Armani ◽  
Carlo Zanotti-Fregonara ◽  
Enos Gombia ◽  
Martin Albrecht ◽  
...  
Keyword(s):  
Volume Fraction ◽  
Deep Level ◽  
Cubic Phase ◽  
Donor Level ◽  
Yellow Luminescence ◽  
Wurtzite Phase ◽  
Shallow Acceptor ◽  
Deep Donor ◽  
P Type ◽  
Deep Donor Level

Yellow luminescence (YL) has been studied in GaN:Mg doped with Mg concentrations ranging from 1019 to 1021 cm-3 by spectral CL (T=K) and TEM and explained by suggesting that a different mechanism could be responsible for the YL in p-type GaN with respect to that acting in n-type GaN.Transitions at 2.2, 2.8, 3.27, 3.21, and 3.44 eV were found. In addition to the wurtzite phase, TEM showed a different amount of the cubic phase in the samples. Nano tubes with a density of 3×109 cm−2 were also observed by approaching the layer/substrate interface. Besides this, coherent inclusions were found with a diameter in the nm range and a volume fraction of about 1%.The 2.8 eV transition was correlated to a deep level at 600 meV below the conduction band (CB) due to MgGa-VN complexes. The 3.27 eV emission was ascribed to a shallow acceptor at about 170-190 meV above the valence band (VB) due to MgGa.The 2.2 eV yellow band, not present in low doped samples, increased by increasing the Mg concentration. It was ascribed to a transition between a deep donor level at 0.8-1.1 eV below the CB edge due to NGa and the shallow acceptor due to MgGa. This assumption was checked by studying the role of C in Mg compensation. CL spectra from a sample with high C content showed transitions between a C-related 200 meV shallow donor and a deep donor level at about 0.9-1.1 eV below the CB due to a NGa-VN complex. In our hypothesis this should induce a decrease of the integrated intensity in both the 2.2 and 2.8 eV bands, as actually shown by CL investigations.

Study of a deep donor level in n-GaAs by electron transport data obtained under hydrostatic pressure

2014 ◽  
Vol 48 (8) ◽  
pp. 996-998
Author(s):  
M. I. Daunov ◽  
U. Z. Zalibekov ◽  
I. K. Kamilov ◽  
A. Yu. Mollaev
Keyword(s):  
Electron Transport ◽  
Hydrostatic Pressure ◽  
Donor Level ◽  
Deep Donor ◽  
Deep Donor Level

Microscopic Examination of EL2 Associated with Single Dislocations in GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
D.J. Stirland ◽  
M.R. Brozel
Keyword(s):  
Dislocation Density ◽  
Microscopic Examination ◽  
Donor Level ◽  
Infrared Transmission ◽  
Transmission Microscopy ◽  
Low Dislocation Density ◽  
Infra Red ◽  
Deep Donor ◽  
Deep Donor Level

Abstract2" diameter wafers cut from indium doped, liquid encapsulated Czochralski (LEC) grown GaAs ingots have been examined by two different methods. Dislocations were revealed by etching, and isolated regions of enhanced [EL2], the concentration of the deep donor level EL2, weredetected by infrared transmission microscopy. In regions of low dislocation density (∼5 × 102 cm−2) single isolated dislocations were identified and at the identical sites infra-red micrographs showed increased absorption. The results demonstrate that enhancement of [EL2]occurs at single dislocations, and that the enhancement can be detected by suitable etching techniques.

Poole–Frenkel effect assisted emission from deep donor level in chromium doped GaP

1998 ◽  
Vol 72 (3) ◽  
pp. 302-304 ◽  
Author(s):  
R. Ajjel ◽  
M. A. Zaidi ◽  
S. Alaya ◽  
G. Brémond ◽  
G. Guillot ◽  
...  
Keyword(s):  
Donor Level ◽  
Frenkel Effect ◽  
Deep Donor ◽  
Deep Donor Level

Photo-EPR and Spatially Resolved EPR of ASGa in As-Grown GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
M. Baeumler ◽  
U. Kaufmann ◽  
J. Windscheif
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Donor Level ◽  
Paramagnetic Resonance ◽  
Illumination Time ◽  
Gaas Wafer ◽  
Spatially Resolved ◽  
Deep Donor ◽  
Photo Response ◽  
Electron Paramagnetic ◽  
Deep Donor Level

AbstractThe photo-response of the ASGa+ antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown GaAs as a function of illumination time and photon energy. The results establish a firm and positive correlation between ASGa and the deep donor level EL2. Spatially resolved EPR measurements show that the ASGa concentration can fluctuate by about a factor of two across a 2-inch semiinsulating GaAs wafer.

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