Photo-EPR and Spatially Resolved EPR of ASGa in As-Grown GaAs

1985 ◽  
Vol 46 ◽  
Author(s):  
M. Baeumler ◽  
U. Kaufmann ◽  
J. Windscheif
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Donor Level ◽  
Paramagnetic Resonance ◽  
Illumination Time ◽  
Gaas Wafer ◽  
Spatially Resolved ◽  
Deep Donor ◽  
Photo Response ◽  
Electron Paramagnetic ◽  
Deep Donor Level

AbstractThe photo-response of the ASGa+ antisite electron-paramagnetic-resonance (EPR) has been studied in as-grown GaAs as a function of illumination time and photon energy. The results establish a firm and positive correlation between ASGa and the deep donor level EL2. Spatially resolved EPR measurements show that the ASGa concentration can fluctuate by about a factor of two across a 2-inch semiinsulating GaAs wafer.

ELECTRON PARAMAGNETIC RESONANCE STUDIES OF PHASE TRANSITIONS IN KCN

1976 ◽  
Vol 37 (C7) ◽  
pp. C7-241-C7-246 ◽  
Author(s):  
J.P. VON DER WEID ◽  
L.C. SCAVARDA DO CARMO ◽  
R. R. DO SANTOS ◽  
B. KOILLER ◽  
S. COSTA RIBEIRO ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Phase Transitions ◽  
Paramagnetic Resonance ◽  
Electron Paramagnetic

Electron paramagnetic resonance in silicon and germanium

1964 ◽  
Vol 83 (7) ◽  
pp. 433-502 ◽  
Author(s):  
L.D. Bogomolova ◽  
V.N. Lazukin ◽  
I.V. Chepeleva
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Paramagnetic Resonance ◽  
Silicon And Germanium ◽  
Electron Paramagnetic
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