Iron Diffusion Profile Studies by Surface Photo-Voltage for Silicon Iron Implanted Wafers After Rapid Thermal Anneal

2019 ◽  
Vol 2 (10) ◽  
pp. 33-41
Author(s):  
Igor Rapoport ◽  
Patrick Taylor ◽  
Seung-Bae Kim ◽  
Benno Orschel ◽  
W. Huber
Keyword(s):  
Diffusion Profile ◽  
Rapid Thermal Anneal ◽  
Silicon Iron ◽  
Iron Diffusion

Two-side surface photovoltage studies for implanted iron diffusion in silicon during rapid thermal anneal

2010 ◽  
Vol 107 (1) ◽  
pp. 013518 ◽  
Author(s):  
I. Rapoport ◽  
P. Taylor ◽  
J. Kearns ◽  
D. K. Schroder
Keyword(s):  
Side Surface ◽  
Surface Photovoltage ◽  
Rapid Thermal Anneal ◽  
Iron Diffusion

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

EFFECT OF ADDITION OF THIRD ELEMENT IN HIGH SILICON-IRON ALLOY

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-133-C8-134
Author(s):  
H. Nakamura ◽  
N. Tsuya ◽  
Y. Saito ◽  
Y. Katsumata ◽  
Y. Harada
Keyword(s):  
Iron Alloy ◽  
Silicon Iron ◽  
High Silicon

Electrical Damage Due to Low Energy Plasma Processing of GaAs Structures

1991 ◽  
Vol 223 ◽  
Author(s):  
Hans P. Zappe ◽  
Gudrun Kaufel
Keyword(s):  
Chemical Processes ◽  
Low Energy ◽  
Electrical Behavior ◽  
Rapid Thermal Anneal ◽  
High Temperature Anneal ◽  
Significant Damage ◽  
Low Energies ◽  
Long Time ◽  
Physical Plasma

ABSTRACTThe effect of numerous plasma reative ion etch and physical milling processes on the electrical behavior of GaAs bulk substrates has been investigated by means of electric microwave absorption. It was seen that plasma treatments at quite low energies may significantly affect the electrical quality of the etched semiconductor. Predominantly physical plasma etchants (Ar) were seen to create significant damage at very low energies. Chemical processes (involving Cl or F), while somewhat less pernicious, also gave rise to electrical substrate damage, the effect greater for hydrogenic ambients. Whereas rapid thermal anneal treatments tend to worsen the electrical integrity, some substrates respond positively to long-time high temperature anneal steps.

MAGNESIL-N

Alloy Digest ◽  
1975 ◽  
Vol 24 (7) ◽  
Keyword(s):  
Shear Strength ◽  
Physical Properties ◽  
Tensile Properties ◽  
Iron Alloy ◽  
Heat Treating ◽  
Rolling Plane ◽  
Silicon Iron

Abstract MAGNESIL-N is a non-oriented silicon-iron alloy of exceptional magnetic qualities designed for applications involving frequencies of 400 Hertz and higher. It has good permeability in all directions of the rolling plane, and is designed for either punched or sheared laminations with random flux disposition. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and shear strength. It also includes information on forming and heat treating. Filing Code: Fe-53. Producer or source: Spang Industries Inc..

DURICHLOR 51M

Alloy Digest ◽  
1996 ◽  
Vol 45 (4) ◽  
Keyword(s):  
Compressive Strength ◽  
Corrosion Resistance ◽  
Hydrochloric Acid ◽  
Physical Properties ◽  
Tensile Properties ◽  
Silicon Iron ◽  
Chlorine Gas ◽  
High Silicon

Abstract Durichlor 51M is a high silicon iron for corrosive services, especially in the handling of hydrochloric acid in all concentrations. It is also very resistant to most chlorine gas and many destructive chloride-containing solutions. The alloy is treated at melting by argon ladle degassing. This datasheet provides information on composition, physical properties, hardness, tensile properties, and compressive strength. It also includes information on corrosion resistance as well as machining and joining. Filing Code: FE-109. Producer or source: The Duriron Company Inc.

DURICHLOR 51 SUPERCHLOR

Alloy Digest ◽  
1993 ◽  
Vol 42 (1) ◽  
Keyword(s):  
Compressive Strength ◽  
Corrosion Resistance ◽  
Hydrochloric Acid ◽  
Physical Properties ◽  
Tensile Properties ◽  
Silicon Iron ◽  
Chlorine Gas ◽  
High Silicon

Abstract DURICHLOR 51 SUPERCHLOR is a vacuum treated high silicon iron for corrosive services, especially in the handling of hydrochloric acid in all concentrations. It is also very resistant to most chlorine gas and many destructive chloride-containing solutions. This datasheet provides information on composition, physical properties, hardness, tensile properties, and compressive strength. It also includes information on corrosion resistance as well as machining and joining. Filing Code: FE-98. Producer or source: The Duriron Company Inc.

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