Anodic Copper Oxidation in Alkaline Mediums with α-Alanine and Asparagine Acid Additives

2019 ◽  
Vol 2 (9) ◽  
pp. 193-201 ◽  
Author(s):  
Svetlana A. Kaluzhina ◽  
Ekaterina Skrypnikova ◽  
Eugenia Orlova ◽  
Jlia Kosareva
Keyword(s):  
Copper Oxidation ◽  
Anodic Copper

scholarly journals A novel copper precursor for electron beam induced deposition

2018 ◽  
Vol 9 ◽  
pp. 1220-1227 ◽  
Author(s):  
Caspar Haverkamp ◽  
George Sarau ◽  
Mikhail N Polyakov ◽  
Ivo Utke ◽  
Marcos V Puydinger dos Santos ◽  
...  
Keyword(s):  
Electron Beam ◽  
Optical Transmission ◽  
Pure Copper ◽  
Dielectric Behavior ◽  
Copper Oxidation ◽  
Transmission Electron ◽  
Sum Formula ◽  
Electron Beam Induced Deposition ◽  
High Degree ◽  
Good Agreement

A fluorine free copper precursor, Cu(tbaoac)2 with the chemical sum formula CuC16O6H26 is introduced for focused electron beam induced deposition (FEBID). FEBID with 15 keV and 7 nA results in deposits with an atomic composition of Cu:O:C of approximately 1:1:2. Transmission electron microscopy proved that pure copper nanocrystals with sizes of up to around 15 nm were dispersed inside the carbonaceous matrix. Raman investigations revealed a high degree of amorphization of the carbonaceous matrix and showed hints for partial copper oxidation taking place selectively on the surfaces of the deposits. Optical transmission/reflection measurements of deposited pads showed a dielectric behavior of the material in the optical spectral range. The general behavior of the permittivity could be described by applying the Maxwell–Garnett mixing model to amorphous carbon and copper. The dielectric function measured from deposited pads was used to simulate the optical response of tip arrays fabricated out of the same precursor and showed good agreement with measurements. This paves the way for future plasmonic applications with copper-FEBID.

Restraint of Copper Oxidation Using Barrier Restoration Technique with Cu–Mn Alloy

2010 ◽  
Vol 49 (5) ◽  
pp. 05FA01 ◽  
Author(s):  
Masaki Haneda ◽  
Nobuyuki Ohtsuka ◽  
Hiroshi Kudo ◽  
Takahiro Tabira ◽  
Michie Sunayama ◽  
...  
Keyword(s):  
Copper Oxidation ◽  
Restoration Technique

Copper oxidation state in chalcopyrite: Mixed Cu d9 and d10 characteristics

2006 ◽  
Vol 70 (18) ◽  
pp. 4635-4642 ◽  
Author(s):  
C.I. Pearce ◽  
R.A.D. Pattrick ◽  
D.J. Vaughan ◽  
C.M.B. Henderson ◽  
G. van der Laan
Keyword(s):  
Oxidation State ◽  
Copper Oxidation

Advances in Fine Pitch Off-Chip Interconnections Through the Use of a Novel Surface Finish

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001531-001563
Author(s):  
Arnd Kilian ◽  
Gustavo Ramos ◽  
Rick Nichols ◽  
Robin Taylor ◽  
Vanessa Smet ◽  
...  
Keyword(s):  
Low Temperature ◽  
Surface Finish ◽  
System Integration ◽  
High Performance ◽  
Semiconductor Industry ◽  
Electroless Nickel ◽  
Interfacial Stress ◽  
Copper Oxidation ◽  
Fine Pitch ◽  
Metallurgical Bond

One constant in electronic system integration is the continuous trend towards smaller devices with increased functionality, driven by emerging mobile and high-performance applications. This brings the need for higher bandwidth at lower power, translating into increased I/O density, to enable highly-integrated systems with form factor reduction. These requirements result in the necessity of interconnection pitch-scaling, below 30 μm in the near future, and substrates with high wiring densities, leading to routing with sub 5 μm L/S where standard surface finishes (ENIG, ENEPIG) are no longer applicable. Copper pillar with solder caps technology is currently the prevalent solution for off-chip interconnections at fine pitch, dominating the high performance and mobile market with pitches as low as 40 μm in production. However, this technology faces many fundamental limitations in pitch scaling below 30 μm, due to solder bridging, IMC-solder interfacial stress management, and poor power handling capability of solders. All-copper interconnections without solder are very sought after by the semiconductor industry and have been applied to 3D-IC stacking, however no cost effective, manufacturable and scalable solution has been proposed to date for HVM and application to non CTE matched package structures. The low temperature Cu-Cu interconnection technology without solder recently patented by Georgia Tech PRC is one of the most promising solutions to this problem. The main bottleneck of copper oxidation is dealt with by application of ENIG on the Cu bumps and pads, enabling formation of a reliable metallurgical bond by thermocompression bonding (TCB) at temperatures below 200°C, in air, with cycle-times compatible with HVM targets. However, to ensure a bump collapse of 3 μm to overcome non-coplanarities and warpage, a pressure of 300MPa is used in the Process-of-Record (PoR) conditions, limiting the scalability of this technology. This paper introduces a novel Electroless Palladium / Autocatalytic Gold (EPAG) surface finish process, to enable the next generation of high density substrates and interconnections. With circa 100nm-thin Pd and Au layers, the EPAG finish can be applied to fine L/S wiring, with no risk of bridging adjacent Cu traces, even with spacing below 5 μm. Further, the EPAG finish is compatible with current interconnection processes; such as wire bonding, and the Cu pillar and solder cap technology for fine-pitch applications. For further pitch reduction, the EPAG surface finish was coupled to GT PRC's low-temperature Cu-interconnections, in an effort to reduce the bonding load for enhanced manufacturability without degrading the metallurgical bond or reliability. This paper is the first demonstration of such interconnections. The effect of the surface finish thickness and composition on the bonding load, assembly yield, quality of the metallurgical bond was extensively evaluated based on analysis of the metal interface microstructures and the chemical composition of the joints. The current PoR using Electroless Nickel / Immersion Gold (ENIG) coated Cu pillars and pads was used as reference. A novel surface finish is introduced, which allows formation of Cu-Cu interconnections without solder at lower pressure, between a silicon die and glass, organic or silicon substrate at fine pitch, allowing the performance improvements demanded by the IC Packaging Industry.

Copper Oxidation on Pt(111)—More than a Surface Oxide?

2019 ◽  
Vol 123 (44) ◽  
pp. 26939-26946 ◽  
Author(s):  
Alexander Gloystein ◽  
Niklas Nilius
Keyword(s):  
Surface Oxide ◽  
Copper Oxidation
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