Reduced Dislocation Densities in Liquid Phase Epitaxy Layers by Intermittent Growth

1971 ◽  
Vol 118 (5) ◽  
pp. 793 ◽  
Author(s):  
R. H. Saul
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Dislocation Densities

Growth of High Quality Lwir Films by Liquid Phase Epitaxy

1989 ◽  
Vol 161 ◽  
Author(s):  
Dipankar Chandra
Keyword(s):  
Liquid Phase ◽  
Electrical Properties ◽  
Liquid Phase Epitaxy ◽  
Substrate Surface ◽  
Electrical Performance ◽  
Cdznte Substrate ◽  
Long Wavelength ◽  
Indium Doping ◽  
Dislocation Densities ◽  
Infra Red

ABSTRACTGrowth of long wavelength infra-red mercury cadmium telluride films by liquid phase epitaxy has usually yielded films of inferior electrical properties as evidenced by Hall mobilities lower than theoretical values by factors of 5 or more at 77°K. In addition the Hall behavior over the entire temperature range did not follow classical patterns. A systematic series of investigations was conducted to improve the electrical performance of these films by four methods: i) growth of HgCdZnTe films, where a portion of the cadmium was replaced by zinc, ii) growth at temperatures > 550°C, iii) growth at a slow rate on a CdZnTe substrate following ‘Cleaning’ in the melt of the substrate surface and iv) doping the film by controlled levels of indium. The first method did not lead to any improvements in the Hall behavior. In addition, the films grown displayed varying dislocation densities. The second method led to a small but definite increase in the yield of non-anomalous or classical films (5%). The third method yielded films with classical or non-anomalous Hall behavior about 20% of the time. The last method consistently led to films with classical Hall behavior. This was accomplished with indium doping levels at 1.5× 1014/cm3. Preliminary data indicate that it will be possible to go to still lower doping levels while maintaining classical Hall behavior. The improvement in electrical properties of these epifilms can be attributed to the reduction or elimination of type inhomogeneities known to degrade Hall mobilities in films grown by liquid phase epitaxy.

Dislocation Distributions in Cd1-xHgxTe/CdTe and Cd1-xHgxTe/Cd1-yZnyTe Grown by Liquid Phase Epitaxy

1994 ◽  
Vol 356 ◽  
Author(s):  
C. C. R. Watson ◽  
K. Durose ◽  
E. O’Keefe ◽  
J. M. Hudson ◽  
B. K. Tanner
Keyword(s):  
Liquid Phase ◽  
Dislocation Density ◽  
Liquid Phase Epitaxy ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dislocation Densities ◽  
Threading Dislocation Density ◽  
O 24

Epilayers of LPE Cdo.24Hgo.76Te grown on (111)B CdTe and Cdi-xZnxTe substrates have been examined by defect etching and triple axis x-ray diffraction. Defect etching of bevelled layers has shown the threading dislocation density to fall with increasing distance from the heterointerface, for distances <6μm. In thicker regions however a constant ‘background’ dislocation density is observed. Background dislocation densities of ∼ 3 x 105cm-2 and 9 x 104cm-2 have been measured for layers grown on CdTe and Cdo.96Zn0.04Te respectively, this is compared with a substrate dislocation density of ∼ 3 x 104cm-2 measured in both types of substrates. The increase in the dislocation density within the epilayers compared with the corresponding substrate is discussed. An explanation is also given for the displacement of the peak dislocation density, from the interface to within the layer, observed in the Cd0.76Hg0.24Te / Cd0.96Zn0.04Te system.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy

1987 ◽  
Vol 23 (7) ◽  
pp. 324 ◽  
Author(s):  
P.D. Greene ◽  
A.D. Prins ◽  
D.J. Dunstan ◽  
A.R. Adams
Keyword(s):  
Liquid Phase ◽  
Indium Phosphide ◽  
Liquid Phase Epitaxy

scholarly journals LPE Growth of Composite Thermoluminescent Detectors Based on the Lu3−xGdxAl5O12:Ce Single Crystalline Films and YAG:Ce Crystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 189 ◽  
Author(s):  
Sandra Witkiewicz-Lukaszek ◽  
Anna Mrozik ◽  
Vitalii Gorbenko ◽  
Tetiana Zorenko ◽  
Pawel Bilski ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Epitaxial Structure ◽  
Simultaneous Registration ◽  
Crystalline Films ◽  
Ionization Radiation ◽  
Growth Method ◽  
The Difference ◽  
Thermoluminescent Detectors

This work is dedicated to the development of new types of composite thermoluminescent (TL) detectors for simultaneous registration of the different components of ionization radiation based on the single crystalline films (SCFs) of Ce3+-doped Lu3−xGdxAl5O12:Ce (x = 0–1.5) garnet and Y3Al5O12:Ce (YAG:Ce) substrates using the liquid phase epitaxy (LPE) growth method. For this purpose, the TL properties of the mentioned epitaxial structures were examined in Risø TL/OSL-DA-20 reader under excitation by α- and β-particles from 242Am and 90Sr-90Y sources. We have shown that the cation engineering of SCF content can result in more significant separation of the TL glow curves of SCFs and substrates under α- and β-particle excitations in comparison with the prototype of such composite detectors based on the Lu3Al5O12:Ce (LuAG:Ce)/YAG:Ce epitaxial structure. Specifically, the difference between the TL glow curves of Lu1.5Gd1.5Al5O12:Ce SCFs and YAG:Ce substrates increases up to 120 K in comparison with a respective value of 80 degrees in the prototype based on the LuAG:Ce/YAG:Ce epitaxial structure. Therefore, the LPE-grown epitaxial structures containing Lu1.5Gd1.5Al5O12:Ce SCFs and Ce3+-doped YAG:Ce substrate can be successfully applied for simultaneous registration of α- and β-particles in mixed fluxes of ionization radiation.

Undopedn-Type GaSb Grown by Liquid Phase Epitaxy

1974 ◽  
Vol 13 (1) ◽  
pp. 203-204 ◽  
Author(s):  
Hidejiro Miki ◽  
Kazuaki Segawa ◽  
Keiji Fujibayashi
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy
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