Chemical Deposition of Single Crystal Gold Films

1970 ◽  
Vol 117 (9) ◽  
pp. 1156 ◽  
Author(s):  
Richard Sard
1977 ◽  
Vol 13 (3) ◽  
pp. 245-253 ◽  
Author(s):  
W. Fischer ◽  
H. Geiger ◽  
P. Rudolf ◽  
P. Wissmann

1961 ◽  
Vol 6 (69) ◽  
pp. 1185-1187 ◽  
Author(s):  
E. Gillam ◽  
M. Phillips

1963 ◽  
Vol 34 (6) ◽  
pp. 1699-1702 ◽  
Author(s):  
K. L. Chopra ◽  
L. C. Bobb ◽  
M. H. Francombe

Author(s):  
А.И. Охапкин ◽  
П.А. Юнин ◽  
М.Н. Дроздов ◽  
С.А. Королев ◽  
С.А. Краев ◽  
...  

AbstractThe plasma-chemical deposition of diamond-like carbon (DLC) films onto heavily boron-doped single-crystal p -type diamond (the concentration ~10^20 cm^–3) in CH_4 + Ar plasma is conducted. The deposition rate is 7 nm min^–1. The elemental composition and properties of the films are studied in detail. It is found that the films are enriched with hydrogen, possess a density of 2.4 g cm^–3, and exhibit an ultrasmooth surface (with a roughness of 0.4 ± 0.2 nm).


Author(s):  
J. R. Lloyd ◽  
S. Nakahara

Voids or gas hubbies have been observed in sputtered and evaporated gold films, following post deposition annealing. Small voids have also been observed in gold films after electromigration (EM). AS few voids are visible before annealing or prior to EM, it was concluded that these processes are responsible for the principal mechanism for void formation. We have made a further study on the formation of voids or gas bubbles in as-deposited as well as annealed gold films which are prepared by vapor deposition. It is demonstrated that a large number of voids (< 50 Å) are, in fact, present in gold films prior to annealing or EM.Single-crystal gold films were grown epitaxially by vapor deposition onto KC1 substrates held at 250°C in an ion-pump vacuum of 1 x 10-5 Torr. In order to obtain a variation in deposition rate within a single sample, deposits were made through a mask separated from the substrate, resulting in significant shadowing.


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