GaAs[sub 1−×]P[sub ×] Electroluminescent Diodes Made by Zn Diffusion in an Open-Tube System

1972 ◽  
Vol 119 (9) ◽  
pp. 1258 ◽  
Author(s):  
K. K. Shih ◽  
J. M. Blum
Keyword(s):  
1975 ◽  
Vol 30 (3) ◽  
pp. 317-322 ◽  
Author(s):  
T. Kiyosawa ◽  
K. Masumoto ◽  
S. Isomura

2005 ◽  
Vol 865 ◽  
Author(s):  
David Fuertes Marrón ◽  
Sebastian Lehmann ◽  
Thomas Schedel-Niedrig ◽  
Joachim Klaer ◽  
Reiner Klenk ◽  
...  

AbstractDevice-grade CuGaSe2 (CGSe) and CuInS2 (CIS) thin films for photovoltaic applications have been subjected to dry surface treatments based on In-S and Ga-S by means of chemical vapor deposition (CVD), carried out in an open-tube system. Film properties have been monitored from time and temperature processing series. Improved PV performance has been demonstrated from devices based on treated CGSe compared to those based on reference samples. Numerical simulations have been performed, pointing out the conditions such surface treatments should fulfil in order to improve the performance of devices based on wide gap absorbers.


1988 ◽  
Vol 63 (4) ◽  
pp. 1052-1059 ◽  
Author(s):  
S. Reynolds ◽  
D. W. Vook ◽  
J. F. Gibbons
Keyword(s):  

1992 ◽  
Vol 31 (Part 1, No. 6A) ◽  
pp. 1842-1844 ◽  
Author(s):  
Minoru Isshiki ◽  
Yutaka Maruyama ◽  
Satoshi Tobe

1990 ◽  
Vol 29 (Part 2, No. 2) ◽  
pp. L213-L216 ◽  
Author(s):  
Toshiyuki Ohishi ◽  
Ken-ichi Ohtsuka ◽  
Yuji Abe ◽  
Hiroshi Sugimoto ◽  
Teruhito Matsui

1988 ◽  
Vol 5 (3) ◽  
pp. 233-238
Author(s):  
Li Weidan ◽  
Pan Huizhen

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